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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Amplified spontaneous emission noise of wavelength converters exploiting cross-gain and cross-phase modulation in semiconductor-laser amplifiers 利用半导体激光放大器中交叉增益和交叉相位调制的波长转换器的放大自发发射噪声
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553733
K. Obermann, S. Kindt, I. Koltchanov, D. Breuer, K. Petermann, S. Diet, R. Ludwig, H. Weber
{"title":"Amplified spontaneous emission noise of wavelength converters exploiting cross-gain and cross-phase modulation in semiconductor-laser amplifiers","authors":"K. Obermann, S. Kindt, I. Koltchanov, D. Breuer, K. Petermann, S. Diet, R. Ludwig, H. Weber","doi":"10.1109/ISLC.1996.553733","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553733","url":null,"abstract":"The amplified spontaneous emission of a saturated semiconductor-laser amplifier is studied analytically and experimentally for co- as well as counterpropagating input waves. It is shown, that copropagating injection can significantly reduce the noise level.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122944544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge 量子点激光器的理论:对量子点电荷的自洽考虑
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553770
L. Asryan, R. Suris
{"title":"To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge","authors":"L. Asryan, R. Suris","doi":"10.1109/ISLC.1996.553770","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553770","url":null,"abstract":"An extension of the theory of quantum dot (QD) lasers is carried out which takes proper account of QD charge. The inclusion of the charge neutrality violation in QDs is shown to be of considerable importance in calculating and optimizing the operating characteristics of QD lasers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116971029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/ 利用As/sub 2/和As/sub 4/在图案衬底上生长SQW InGaAs-GaAs-AlGaAs激光器时铟迁移的比较
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553768
M. Dion, V. K. Gupta, Z. Wasilewski, C. E. Norman, A. Pratt, P. Chow-Chong, R.L. Williams
{"title":"A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/","authors":"M. Dion, V. K. Gupta, Z. Wasilewski, C. E. Norman, A. Pratt, P. Chow-Chong, R.L. Williams","doi":"10.1109/ISLC.1996.553768","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553768","url":null,"abstract":"The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125278895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
5 W CW diffraction-limited InGaAs flared amplifier at 980 nm 5w连续波衍射限制InGaAs喇叭放大器在980nm
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553724
S. O’Brien, A. Schoenfelder, R. Lang
{"title":"5 W CW diffraction-limited InGaAs flared amplifier at 980 nm","authors":"S. O’Brien, A. Schoenfelder, R. Lang","doi":"10.1109/ISLC.1996.553724","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553724","url":null,"abstract":"A broad-area flared amplifier has been fabricated which produces 5 W CW at 972 nm in a single-lobed, diffraction-limited far field pattern. A high power, tunable diode laser is used for the injection source with an injected power of /spl sim/115 mW. We believe that the 5 W CW result reported is /spl sim/40% higher power than any reported power for 980 nm flared amplifiers and is the highest diffraction-limited power ever demonstrated from an all-diode source at any wavelength.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129836186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
From vertical to in-plane emission of circular VCSELs 从垂直到平面的圆形vcsel发射
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553756
D. Arbel, L. Djaloshinski, M. Orenstein
{"title":"From vertical to in-plane emission of circular VCSELs","authors":"D. Arbel, L. Djaloshinski, M. Orenstein","doi":"10.1109/ISLC.1996.553756","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553756","url":null,"abstract":"Large circular VCSELs exhibit spontaneous transition from vertical to almost in-plane, quasi whispering gallery lasing modes. Enhancing this effect by coupling to concentric ring VCSELs is demonstrated and analyzed.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126030683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique 基于生长参数优化技术的伪晶四元AlInGaAs单量子阱激光器极低阈值电流密度
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553764
J. Gilor, M. Blumin, I. Samid, D. Fekete
{"title":"Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique","authors":"J. Gilor, M. Blumin, I. Samid, D. Fekete","doi":"10.1109/ISLC.1996.553764","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553764","url":null,"abstract":"A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125830966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wavelength coverage over 67 nm with a GCSR laser: tuning characteristics and switching speed 波长覆盖67nm以上的GCSR激光器:调谐特性和开关速度
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558751
P. Rigole, S. Nilsson, L. Backbom, B. Stalnacke, T. Klinga, E. Berglind, B. Stoltz, D. Blumenthal, M. Shell
{"title":"Wavelength coverage over 67 nm with a GCSR laser: tuning characteristics and switching speed","authors":"P. Rigole, S. Nilsson, L. Backbom, B. Stalnacke, T. Klinga, E. Berglind, B. Stoltz, D. Blumenthal, M. Shell","doi":"10.1109/ISLC.1996.558751","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558751","url":null,"abstract":"Summary form only given. Complete wavelength coverage over 67 nm was measured with SMSR better than 25 dB using a grating assisted codirectional coupler with WDM sampled rear reflector (GCSR) laser. Wavelength switching time for coupler current step was also measured.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128434614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
The differential efficiency of quantum well lasers 量子阱激光器的微分效率
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/2944.605699
P. Smowton, P. Blood
{"title":"The differential efficiency of quantum well lasers","authors":"P. Smowton, P. Blood","doi":"10.1109/2944.605699","DOIUrl":"https://doi.org/10.1109/2944.605699","url":null,"abstract":"Using experimental measurements of spontaneous emission spectra, we have identified the components which determine the external differential injection efficiency of laser diodes. We have shown that, even though the emission from the n=l transition pins at threshold, there are contributions to /spl eta//sub o//sup d/ above threshold from both the stripe efficiency /spl eta//sub s//sup d/ and the injection efficiency /spl eta//sub i//sup d/, the latter being due to the absence of pinning outside the well.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130337824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 110
Extraction of a large set of laser parameters from different measurements 从不同的测量中提取大量的激光参数
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558796
G. Morthier, P. Verhoeve, R. Baets, R. Schatz
{"title":"Extraction of a large set of laser parameters from different measurements","authors":"G. Morthier, P. Verhoeve, R. Baets, R. Schatz","doi":"10.1109/ISLC.1996.558796","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558796","url":null,"abstract":"We show how most of the parameters of a DFB laser can be extracted from a limited number of relatively simple measurements. These measurements include the ASE spectra at different currents below threshold, the RIN spectra above threshold and the P-I relation. We have performed curve-fitting on different characteristics such as the ASE spectrum, the RIN spectrum and the P-I curve. From the ASE spectrum measured in the vicinity of the lasing wavelength we can extract grating parameters, facet phases, refractive index and gain as well as the wavelength and current dependence of the last two parameters.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131398914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly strained Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P quantum well lasers 高应变Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P量子阱激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553765
P. Mogensen, P. Smowton, P. Blood
{"title":"Highly strained Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P quantum well lasers","authors":"P. Mogensen, P. Smowton, P. Blood","doi":"10.1109/ISLC.1996.553765","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553765","url":null,"abstract":"For increasing compressive strain (1%-1.7%), the 290 K threshold current increases by a factor 3.3. We experimentally show this arises from an increased waveguide loss (10 cm/sup -1/-46 cm/sup -1/) because the well is no longer elastically strained.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134468956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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