A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553768

M. Dion, V. K. Gupta, Z. Wasilewski, C. E. Norman, A. Pratt, P. Chow-Chong, R.L. Williams

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Abstract

The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.

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利用As/sub 2/和As/sub 4/在图案衬底上生长SQW InGaAs-GaAs-AlGaAs激光器时铟迁移的比较

在MBE生长过程中，铟在图案基质上的迁移被发现强烈依赖于所使用的砷种类。使用AS/sub - 4/生长在窄平台上的InGaAs-GaAs SQW激光器表现出70 mev的红移，而使用AS/sub - 2/生长的激光器仅表现出很小的红移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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