5 W CW diffraction-limited InGaAs flared amplifier at 980 nm

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553724

S. O’Brien, A. Schoenfelder, R. Lang

引用次数: 1

Abstract

A broad-area flared amplifier has been fabricated which produces 5 W CW at 972 nm in a single-lobed, diffraction-limited far field pattern. A high power, tunable diode laser is used for the injection source with an injected power of /spl sim/115 mW. We believe that the 5 W CW result reported is /spl sim/40% higher power than any reported power for 980 nm flared amplifiers and is the highest diffraction-limited power ever demonstrated from an all-diode source at any wavelength.

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5w连续波衍射限制InGaAs喇叭放大器在980nm

制作了一种广域喇叭放大器，在972 nm处产生5w连续波，其波长为单瓣，绕射受限远场模式。注入源采用高功率可调谐二极管激光器，注入功率为/spl sim/115 mW。我们认为，所报道的5 W连续波的功率比任何报道的980 nm喇叭放大器的功率高40%，并且是迄今为止在任何波长下从全二极管源证明的最高衍射限制功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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