Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553764

J. Gilor, M. Blumin, I. Samid, D. Fekete

引用次数: 1

Abstract

A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.

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基于生长参数优化技术的伪晶四元AlInGaAs单量子阱激光器极低阈值电流密度

采用一种新颖的生长参数优化过程，采用四元量子阱线宽加宽模型，实现了极低的82.5 A/cm/sup /脉冲阈值电流密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

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