Highly strained Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P quantum well lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553765

P. Mogensen, P. Smowton, P. Blood

引用次数: 0

Abstract

For increasing compressive strain (1%-1.7%), the 290 K threshold current increases by a factor 3.3. We experimentally show this arises from an increased waveguide loss (10 cm/sup -1/-46 cm/sup -1/) because the well is no longer elastically strained.

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高应变Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P量子阱激光器

增加压缩应变(1% ~ 1.7%)，290 K阈值电流增加3.3倍。我们的实验表明，这是由于波导损耗增加(10厘米/sup -1/-46厘米/sup -1/)，因为井不再有弹性应变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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