Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553754

P. Thiagarajan, G. Giudice, E. Temkin, G. Y. Robinson

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Abstract

Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.

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采用气源分子束外延生长高应变1.3 /spl mu/m低阈值电流InAsP-InGaAsP激光器

报道了用低阈值电流气源分子束外延生长高应变1.3 /spl mu/m的InAsP-InGaAsP激光器。阈值电流在20/压升度/C时低至1.1 mA，在100/压升度/C时低至6.1 mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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