Modal gain reduction due to barrier state carriers in quantum well lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553766

D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein

引用次数: 0

Abstract

We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.

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量子阱激光器中势垒态载流子引起的模态增益降低

我们描述了工作在980 nm附近的InGaAs-GaAs量子阱激光器中与势垒态电子相关的效应所导致的模态增益的变化。由于吸收和光约束的变化，电和光激励可以导致模态增益损失平衡的极端变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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