R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach
{"title":"遥控增益调制用于远红外p-Ge热孔激光器的主动模式锁定","authors":"R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach","doi":"10.1109/ISLC.1996.553748","DOIUrl":null,"url":null,"abstract":"The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers\",\"authors\":\"R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach\",\"doi\":\"10.1109/ISLC.1996.553748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers
The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.