Experimental analysis of characteristic temperature in quantum-well semiconductor lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/2944.605702

T. Higashi, T. Yamamoto, S. Kubota, S. Ogita

引用次数: 32

Abstract

Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.

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量子阱半导体激光器特性温度的实验分析

测量了1.31-/spl mu/m GaInAsP/InP量子阱激光器增益特性的温度依赖性，并与0.98 /spl mu/m GaInAs/GaAs激光器的增益特性进行了比较。发现1.31-/spl μ m激光器的低特性温度T/sub 0/是由透明电流密度J/sub tr/的温度依赖性决定的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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