1.55 /spl mu/m垂直腔激光器损耗分析

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553731

Joachim Piprek, D. Babic, N. Margalit, John E. Bowers

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引用次数: 2

摘要

只提供摘要形式。最近，首次实现了1.55 /spl mu/m的InGaAsP MQW DBR VCSELs的室温连续工作。在较高的温度下，激光操作受到内部损耗的限制，包括带间吸收和载流子泄漏。利用综合数值模型模拟了测量特性，详细分析了这些损耗，并优化了VCSEL设计。

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Loss analysis of 1.55 /spl mu/m vertical cavity lasers

Summary form only given. Recently, room temperature cw operation of 1.55 /spl mu/m InGaAsP MQW DBR VCSELs has been achieved for the first time. At higher temperatures, laser operation is restricted by internal losses including intervalenceband absorption and carrier leakage. Measured characteristics are simulated using a comprehensive numerical model to analyze those losses in detail and to optimize the VCSEL design.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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