过程控制对氧化约束顶发射激光器的影响

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553758

M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain

{"title":"过程控制对氧化约束顶发射激光器的影响","authors":"M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.553758","DOIUrl":null,"url":null,"abstract":"Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"301 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of process control in oxide-confined top-emitting lasers\",\"authors\":\"M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain\",\"doi\":\"10.1109/ISLC.1996.553758\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"301 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553758\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

只提供摘要形式。研究了横向模态与孔径大小的关系。严格的氧化精度要求在1 /spl mu/m的一小部分内，以提供高产量，单模，氧化受限的GaAs QW VCSELs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effect of process control in oxide-confined top-emitting lasers

Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量