兼容oeic的侧向注入激光器的内部工作机制:与垂直注入模式的内在差异

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553772

E. Sargent, G. Tan, D. Suda, J.M. Xu

{"title":"兼容oeic的侧向注入激光器的内部工作机制:与垂直注入模式的内在差异","authors":"E. Sargent, G. Tan, D. Suda, J.M. Xu","doi":"10.1109/ISLC.1996.553772","DOIUrl":null,"url":null,"abstract":"Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"300 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm\",\"authors\":\"E. Sargent, G. Tan, D. Suda, J.M. Xu\",\"doi\":\"10.1109/ISLC.1996.553772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"300 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

探讨了在半绝缘衬底上生长的适用于单片光电集成的侧向注入半导体激光器的性能机制。结果与实验一致，允许理解器件操作相对于垂直注入激光器的内在差异，并产生改进设计方法的见解。

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Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm

Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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