具有极低光束发散的980 nm InGaAs/AlGaAs量子阱激光器

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553725

S. Yen, G. Lin, Der-Cherng Liu, Chia-Ming Tsai, Chien-Ping Lee

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引用次数: 0

摘要

本文报道了一种特殊包层结构的980 nm InGaAs-AlGaAs激光器的制备。对于2.5 /spl μ m宽的脊波导结构，远场模式的垂直散度仅为13/spl°/，横向散度为8/spl°/。同时，阈值电流可以保持可接受的低。此外，通过另一种设计，获得了创纪录的小垂直远场角11/spl°/。

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980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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