{"title":"与n型/spl δ /掺杂层耦合的应变量子阱激光器的超低透明电流密度","authors":"O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete","doi":"10.1109/ISLC.1996.553740","DOIUrl":null,"url":null,"abstract":"By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer\",\"authors\":\"O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete\",\"doi\":\"10.1109/ISLC.1996.553740\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553740\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer
By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.
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