两段InGaAsP-InP MQW复合耦合DFB激光二极管产生高功率皮秒脉冲

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.558778

Ziping Jiang, H. Tsang, W. Wang, Zhijie Wang, Xiaojie Wang, Qiming Wang

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引用次数: 1

摘要

我们证明，通过设置施加在器件每个部分的电脉冲之间的最佳振幅和时间延迟，可以从InGaAsP压缩应变两段MQW激光二极管产生高功率皮秒脉冲。

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High power picosecond pulse generation from a two-section InGaAsP-InP MQW complex-coupled DFB laser diode

We show that high power picosecond pulses can be generated from a InGaAsP compressively strained two-section MQW laser diode by setting an optimal amplitude and time delay between the electrical pulses applied to each section of the device.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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