Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer

O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete
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Abstract

By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.
与n型/spl δ /掺杂层耦合的应变量子阱激光器的超低透明电流密度
利用单应变量子阱与n型/spl δ /掺杂层的组合,降低了激光器的透明电流密度。与均匀掺杂的有源区相比,在不增加内部损耗的情况下实现了这一目标。
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