[Reliability of Compound Semiconductors] ROCS Workshop, 2005.最新文献

Thermal acceleration of compound semiconductors in humidity 湿度条件下化合物半导体的热加速度

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201557

W. Roesch

引用次数: 7

Reliability investigation of metal-semiconductor diodes in an E/D pHEMT process 金属半导体二极管在E/D pHEMT工艺中的可靠性研究

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201564

S. Somisetty, P. Ersland, Xinxing Yang

引用次数: 0

An investigation and comparison of 45-degree spread the modeland other techniques to extract junction temperature of HBT and PHEMT for reliability life test 研究并比较了45度扩展模型和其他方法在HBT和PHEMT可靠性寿命试验中提取结温的方法

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201555

S.C. Chen, B. Hsiao, F. Chou, K. Yu, H. Chou, C. Wu

引用次数: 1

Reliability of compound semiconductor workshop historical review 化合物半导体车间可靠性历史回顾

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201549

W. Roesch

引用次数: 6

An overview of reliability testing challenges in integrated power amplifier modules for wireless applications 无线应用集成功率放大器模块可靠性测试挑战概述

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201556

Y. Qu, P. Scott, L. Marchut, M. Ferrara

{"title":"An overview of reliability testing challenges in integrated power amplifier modules for wireless applications","authors":"Y. Qu, P. Scott, L. Marchut, M. Ferrara","doi":"10.1109/ROCS.2005.201556","DOIUrl":"https://doi.org/10.1109/ROCS.2005.201556","url":null,"abstract":"When compound semiconductors first emerged in the communications market, they were marketed in the form of single die that were assembled in industry standard packages. Although the semiconductor materials were new, the reliability tests used to evaluate them were proven, time-tested standards adopted from the silicon industry. As the wireless industry continues to evolve, consumer electronics manufacturers have demanded more integration from their wireless component suppliers. Second and third generation wireless components now integrate features that would have historically required multiple physical components on the application board. The net result of this trend is a simplification of design for consumer end-product designers and a complication of design for component suppliers. In addition, the implications for reliability testing have proven significant. Present generation power amplifier modules contain as many as five semiconductor die from different fabrication processes, multiple passive surface mount devices, and an elaborate package substrate to connect all of the components together. This paper will discuss how industry trends in RF components have forced new approaches in component reliability testing. Reliability standards may also need to evolve to address the issues created by new RF integrated modules.","PeriodicalId":345081,"journal":{"name":"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122174921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Full band ensemble monte carlo simulations for reliability investigation of highvoltage single & double heterojunction bipolar transistors for military and base station applications including a proposed high breakdown composite collector design 用于军事和基站应用的高压单双异质结双极晶体管可靠性研究的全频带集成蒙特卡罗模拟，包括提出的高击穿复合集电极设计

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201559

S. Madra

{"title":"Full band ensemble monte carlo simulations for reliability investigation of highvoltage single & double heterojunction bipolar transistors for military and base station applications including a proposed high breakdown composite collector design","authors":"S. Madra","doi":"10.1109/ROCS.2005.201559","DOIUrl":"https://doi.org/10.1109/ROCS.2005.201559","url":null,"abstract":"High-voltage HBTsaregaining considerable interest foremerging military andcommercial CATV and microwave base station applications. Understanding ofcarrier transport anddynamics assumes vital importance to establish safe operating areas (SOAs) forthese devices inorder toavoid detrimental effects suchasimpact ionization leading todevice breakdown. Contemporary formalisms based on'drift-diffusion ' theories suffer from several shortcomings inaccurate modeling ofchare transport under such high-field regimes through sub-micron device geometries. Ourcomprehensive 'full-band' ensemble MonteCarlo simulations modelcharge transport through n-GalnP/p+GaAs/n-GaAs single heterojunction bipolar transistors (SHBTs), while establishing the ionization coefficients andv-Fcharacteristics forthecollector region. Double heterojunction bipolar transistors (DHBTs)involving acomposite collector design (CCD)withwidebandgap materials holdgreater promise in pushing theJohnson figure-of-merit forhighvoltage applications. However, CCD implementation involves numerous challenges, including butnotlimited tothefollowing: lattice matching toGaAs, negligible conduction bandoffset atallheterojunctions toavoid current blocking duetopotential 'spike', loweffective massandhigh electron velocity, acceptable dielectric permittivity, wideseparation between valence andconduction bandto avoid high-field tunneling, high breakdown strength andimpact ionization threshold energies. Wediscuss ahighbreakdown composite collector DHBTwhich incorporates all these desirable aspects.","PeriodicalId":345081,"journal":{"name":"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.","volume":"408 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122721467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of aluminium metallisation in ldmos RF power applications 铝金属化在ldmos射频电源中的应用

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201561

P. van der Wel, R.A. van den Heuvel, H. Peuscher, Y. Li, J. G. Gommans, F. van Rijs, P. Bron, S. Theeuwen

引用次数: 0

Reliability of E/D PHEMT process for control circuit applications 用于控制电路应用的E/D PHEMT工艺的可靠性

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI: 10.1109/ROCS.2005.201566

Xinxing Yang, P. Ersland

引用次数: 2

Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density 高正向电流密度下工作的砷化镓PHEMT肖特基二极管电迁移的物理证据

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 1900-01-01 DOI: 10.1109/ROCS.2005.201565

Y. Chou, D. Leung, M. Biedenbender, D. Eng, Q. Kan, R. Lai, T. Block, A. Oki

引用次数: 0

Reliability testing of an lna with 0.18 /spl mu/m gate process 0.18 /spl mu/m栅极工艺的lna可靠性试验

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 1900-01-01 DOI: 10.1109/ROCS.2005.201563

H. Jen, P. Ersland, C. Gil, Shiou Lung, G. Chu

引用次数: 0