湿度条件下化合物半导体的热加速度

W. Roesch
{"title":"湿度条件下化合物半导体的热加速度","authors":"W. Roesch","doi":"10.1109/ROCS.2005.201557","DOIUrl":null,"url":null,"abstract":"Purpose Product reliability investigations typically include accelerated humidity testing. Originally, the \"standard\" test was a biased 8501/85% Relative Humidity (RH) lifetest for 1000 hours. Recently, a substitute accelerated version of this test has been used. The accelerated version is called HAST (Highly Accelerated Stress Test). The HAST conditions are also biased, at 1300C, 85%°RH, and approximately 18 PSI overpressure. The duration of the HAST test is normally 96100 hours to be equivalent to the 85/85 testtY1 This study is intended to investigate thermal acceleration and show that equivalent HAST tests on Compound Semiconductors are more highly accelerated and could be conducted much faster.","PeriodicalId":345081,"journal":{"name":"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Thermal acceleration of compound semiconductors in humidity\",\"authors\":\"W. Roesch\",\"doi\":\"10.1109/ROCS.2005.201557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Purpose Product reliability investigations typically include accelerated humidity testing. Originally, the \\\"standard\\\" test was a biased 8501/85% Relative Humidity (RH) lifetest for 1000 hours. Recently, a substitute accelerated version of this test has been used. The accelerated version is called HAST (Highly Accelerated Stress Test). The HAST conditions are also biased, at 1300C, 85%°RH, and approximately 18 PSI overpressure. The duration of the HAST test is normally 96100 hours to be equivalent to the 85/85 testtY1 This study is intended to investigate thermal acceleration and show that equivalent HAST tests on Compound Semiconductors are more highly accelerated and could be conducted much faster.\",\"PeriodicalId\":345081,\"journal\":{\"name\":\"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ROCS.2005.201557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Reliability of Compound Semiconductors] ROCS Workshop, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ROCS.2005.201557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

产品可靠性调查通常包括加速湿度测试。最初,“标准”测试是偏差8501/85%相对湿度(RH)寿命测试1000小时。最近,该测试的替代加速版本已被使用。加速版本称为HAST(高度加速压力测试)。在1300C, 85% RH和大约18psi的超压下,HAST条件也有偏差。HAST测试的持续时间通常为96100小时,相当于85/85测试ty1本研究旨在研究热加速,并表明化合物半导体的等效HAST测试加速程度更高,可以更快地进行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal acceleration of compound semiconductors in humidity
Purpose Product reliability investigations typically include accelerated humidity testing. Originally, the "standard" test was a biased 8501/85% Relative Humidity (RH) lifetest for 1000 hours. Recently, a substitute accelerated version of this test has been used. The accelerated version is called HAST (Highly Accelerated Stress Test). The HAST conditions are also biased, at 1300C, 85%°RH, and approximately 18 PSI overpressure. The duration of the HAST test is normally 96100 hours to be equivalent to the 85/85 testtY1 This study is intended to investigate thermal acceleration and show that equivalent HAST tests on Compound Semiconductors are more highly accelerated and could be conducted much faster.
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