Application of aluminium metallisation in ldmos RF power applications

Abstract

In this paper we will compare the electromigration properties of the old (Gold based) and new (Aluminium based) metallisation schemes as used in RF base station power amplifiers manufactured by Philips Semiconductors. We will show that the latest generation shows excellent reliability performance while the RF perfonnance has been strongly enhanced. This has been obtained by optimizing the process and device architecture. Both results of electromigration measurements on test structures and electromigration degradation of full devices will be shown. It is concluded that the latest generation LDMOS RF amplifiers shows excellent RF and reliability performance while using an Aluminium based metallisation scheme.