Reliability testing of an lna with 0.18 /spl mu/m gate process

Abstract

Devices manufactured using a short gate length (0. 18um) pHEMTprocess can achieve very low noisefigure at highfreqzency. This process is targetedfor a variety ofcommercial and military applications. Process reliability tests including ESD, DPA, HTOL, HAST, and TC were performed on a test vehicle with 500pm gate peripheryfrom this process. Results are presentedfor each ofthese tests. Of the early engineering wafers tested (from separate lots), the wafer with in specification PCM data passed HTOL with Mean-Time-To-Failure of 1.42x106 hours and an activation energy of 1.08eV. Reliability test results correlated very well with the process control monitor (PCM) data used to determine whether to accept or reject wafers.