高正向电流密度下工作的砷化镓PHEMT肖特基二极管电迁移的物理证据

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 1900-01-01 DOI:10.1109/ROCS.2005.201565

Y. Chou, D. Leung, M. Biedenbender, D. Eng, Q. Kan, R. Lai, T. Block, A. Oki

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引用次数: 0

摘要

在265℃和280℃的高温环境下，对栅极长度为0。1, 0。在寿命测试中，二极管在500 mA/mm的应力下。在正向电流密度下工作的器件上观察到金属空洞。1.2x106安培/平方厘米(MIL-M-38510: 6x105安培/平方厘米)，除了Ti扩散到AlGaAs肖特基阻挡层与Ti/Pt/Au金属堆叠。金属空洞的形成归因于金的电迁移。在此基础上，建立了不同栅长GaAs PHEMT肖特基二极管的可靠性准则。栅极长度分别为0.1、0.15和0.2 gim的GaAs PHEMT肖特基二极管的安全工作区域(SOA)分别为0.5、0.8和2 mA/指。

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Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

Elevated two-temperature lifetests at Tambient of 265°C and 280°C were performed on GaAs PHEIMT Schottky diodes with various gate lengths of 0. 1, 0. 15, and 0.2 gm. During lifetesting, the diodes were stressed at 500 mA/mm. Metal voids were observed on devices operating at forward current density . 1.2x106 Amps/cm2 (MIL-M-38510: 6x105 Amps/cm2), in addition to Ti diffusion into the AlGaAs Schottky barrier layer with Ti/Pt/Au metal stacks. The formation of metal voids is attributed to Au electromigration. Based on these results, reliability guidelines of GaAs PHEMT Schottky diodes with different gate lengths were established. The safe-operation-areas (SOA) are 0.5, 0.8, and 2 mA/finger for GaAs PHEMT Schottky diodes with gate lengths of 0.1, 0.15, and 0.2 gim, respectively.

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[Reliability of Compound Semiconductors] ROCS Workshop, 2005.

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