铝金属化在ldmos射频电源中的应用

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. Pub Date : 2005-12-27 DOI:10.1109/ROCS.2005.201561

P. van der Wel, R.A. van den Heuvel, H. Peuscher, Y. Li, J. G. Gommans, F. van Rijs, P. Bron, S. Theeuwen

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引用次数: 0

摘要

在本文中，我们将比较飞利浦半导体制造的射频基站功率放大器中使用的旧(金基)和新(铝基)金属化方案的电迁移特性。我们将展示最新一代具有出色的可靠性性能，同时射频性能得到了大力增强。这是通过优化工艺和器件结构实现的。测试结构上的电迁移测量结果和完整器件的电迁移退化结果将被展示。结果表明，采用铝基金属化方案的最新一代LDMOS射频放大器具有优异的射频性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Application of aluminium metallisation in ldmos RF power applications

In this paper we will compare the electromigration properties of the old (Gold based) and new (Aluminium based) metallisation schemes as used in RF base station power amplifiers manufactured by Philips Semiconductors. We will show that the latest generation shows excellent reliability performance while the RF perfonnance has been strongly enhanced. This has been obtained by optimizing the process and device architecture. Both results of electromigration measurements on test structures and electromigration degradation of full devices will be shown. It is concluded that the latest generation LDMOS RF amplifiers shows excellent RF and reliability performance while using an Aluminium based metallisation scheme.

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[Reliability of Compound Semiconductors] ROCS Workshop, 2005.

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