1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference最新文献
{"title":"Total dose performance of a commercial off the shelf ultra-low noise precision bipolar operational amplifier during irradiation","authors":"D. Hiemstra","doi":"10.1109/REDW.1997.629802","DOIUrl":"https://doi.org/10.1109/REDW.1997.629802","url":null,"abstract":"The performance of an ultra-low noise bipolar operational amplifier during irradiation with respect to total dose is presented. Comparison with previously reported results are made.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":" 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132075871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Total dose response of Maxim analog multiplexers at two dose rates","authors":"R. Pease, W. Kemp, J. Chavez, N. Islam, W. Shedd","doi":"10.1109/REDW.1997.629803","DOIUrl":"https://doi.org/10.1109/REDW.1997.629803","url":null,"abstract":"Samples of MAX338CPE and MAX358CPE 8 channel CMOS analog multiplexers were irradiated at 100 and 0.01 rads/s to a total dose of /spl sim/16 krads. Both part types showed a significant increase in leakage current at a total dose as low as 1-2 krads. The only low dose rate sensitivity was for on-resistance in the MAX358, which appears to be a time dependent effect and not a true dose rate effect.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129233039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Radiation hardening of commercial CMOS processes through minimally invasive techniques","authors":"J. Benedetto, D. Kerwin, J. Chaffee","doi":"10.1109/REDW.1997.629807","DOIUrl":"https://doi.org/10.1109/REDW.1997.629807","url":null,"abstract":"UTMC Microelectronic Systems has developed two minimally invasive radiation tolerant modules (RTMs) to harden a commercial CMOS process. The RTMs were successfully inserted into three commercial foundries. The results of UTMC's hardening effort clearly demonstrate that a total dose hardness of between 100 to 500 krad (SiO/sub 2/) can be achieved on a commercial CMOS process without significantly altering the commercial flow. This hardness level is from an initial set of experiments. Response factors from this first set of experiments have been identified which, when fully optimized, may increase the final total dose hardness level significantly.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124403000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Label, A. Moran, C. Seidleck, E. Stassinopoulos, J. Barth, P. Marshall, M. Carts, C. Marshall, J. Kinnison, B. Carkhuff
{"title":"Single event effect test results for candidate spacecraft electronics","authors":"K. Label, A. Moran, C. Seidleck, E. Stassinopoulos, J. Barth, P. Marshall, M. Carts, C. Marshall, J. Kinnison, B. Carkhuff","doi":"10.1109/REDW.1997.629791","DOIUrl":"https://doi.org/10.1109/REDW.1997.629791","url":null,"abstract":"We present both heavy ion and proton single event effect (SEE) ground test results for candidate spacecraft electronics. A variety of digital, analog, and fiber optic devices were tested, including DRAMs, FPGAs and fiber links.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129983511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs","authors":"A.K. Sharma, K. Sahu","doi":"10.1109/REDW.1997.629804","DOIUrl":"https://doi.org/10.1109/REDW.1997.629804","url":null,"abstract":"This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123681036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Layton, D. Strobel, H. Anthony, R. Boss, J. Marshall, J. Parkinson, J. Spratt, B. Passenheim
{"title":"Radiation testing results of COTS based space microcircuits","authors":"P. Layton, D. Strobel, H. Anthony, R. Boss, J. Marshall, J. Parkinson, J. Spratt, B. Passenheim","doi":"10.1109/REDW.1997.629792","DOIUrl":"https://doi.org/10.1109/REDW.1997.629792","url":null,"abstract":"We present both heavy ion single event effect (SEE) and total ionizing dose (TID) data collected at Space Electronics Inc. for candidate spacecraft microelectronics.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114204775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Thouvenot, P. Trochet, R. Gaillard, F. Desnoyers
{"title":"Neutron single event effect test results for various SRAM memories","authors":"D. Thouvenot, P. Trochet, R. Gaillard, F. Desnoyers","doi":"10.1109/REDW.1997.629799","DOIUrl":"https://doi.org/10.1109/REDW.1997.629799","url":null,"abstract":"This paper presents the results of a SEE neutron evaluation carried out on five SRAM types. Sensitivity to the power supply, test pattern and memory cell structures were investigated.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124007561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Proton displacement damage in optocouplers","authors":"M. d'Ordine","doi":"10.1109/REDW.1997.629810","DOIUrl":"https://doi.org/10.1109/REDW.1997.629810","url":null,"abstract":"Proton testing has been performed on an optocoupler and a slotted optical switch. Test samples were biased while being irradiated to include total ionizing dose effects as well as displacement damage.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"310 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122730152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Penzin, W. Crain, K. Crawford, S. Hansel, R. Koga
{"title":"The SEU in pulse width modulation controllers with soft start and shutdown circuits","authors":"S. Penzin, W. Crain, K. Crawford, S. Hansel, R. Koga","doi":"10.1109/REDW.1997.629801","DOIUrl":"https://doi.org/10.1109/REDW.1997.629801","url":null,"abstract":"A study was done of Single Event Upset (SEU) in pulse width modulation (PWM) controllers which feature either soft start or shutdown circuits. Upsets occurring in the soft start circuit of these devices may greatly effect the external circuit depending on the configuration of the PWM.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122761850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ionizing radiation response of an amorphous silicon based antifuse","authors":"J. Benedetto, C. Hafer","doi":"10.1109/REDW.1997.629806","DOIUrl":"https://doi.org/10.1109/REDW.1997.629806","url":null,"abstract":"The ionizing radiation response of Ti/W metal electrode amorphous silicon (/spl alpha/-Si) antifuses is examined. It is shown that the resistance of unprogrammed /spl alpha/-Si antifuses improve (i.e. increase resistance) with increasing radiation dose when irradiated with a positive 3 or 5 V bias. The resistance of unprogrammed /spl alpha/-Si antifuses irradiated with zero bias and the resistance of fully programmed antifuses are insensitive to total ionizing radiation dose. The radiation response of partially programmed antifuses (as programmed resistances between 2000 and 4000 /spl Omega/) is also examined.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"20 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133637143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}