Ionizing radiation response of an amorphous silicon based antifuse

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI:10.1109/REDW.1997.629806

J. Benedetto, C. Hafer

引用次数: 1

Abstract

The ionizing radiation response of Ti/W metal electrode amorphous silicon (/spl alpha/-Si) antifuses is examined. It is shown that the resistance of unprogrammed /spl alpha/-Si antifuses improve (i.e. increase resistance) with increasing radiation dose when irradiated with a positive 3 or 5 V bias. The resistance of unprogrammed /spl alpha/-Si antifuses irradiated with zero bias and the resistance of fully programmed antifuses are insensitive to total ionizing radiation dose. The radiation response of partially programmed antifuses (as programmed resistances between 2000 and 4000 /spl Omega/) is also examined.

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非晶硅基反熔断器的电离辐射响应

研究了Ti/W金属电极非晶硅(/spl α /-Si)防熔丝的电离辐射响应。结果表明，当正3 V或5 V偏压照射时，非编程/spl α /-Si抗熔丝的电阻随辐射剂量的增加而提高(即电阻增加)。零偏置辐照的非编程/spl α /-Si防熔丝的电阻和完全编程的防熔丝的电阻对总电离辐射剂量不敏感。部分编程的抗熔断器的辐射响应(作为编程电阻在2000和4000 /spl ω /之间)也进行了检查。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

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