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1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference最新文献

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Investigation of non-independent single event upsets in the TAOS GVSC static RAM TAOS GVSC静态RAM中非独立单事件扰动的研究
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629798
R. Hosken, R. Koga, B. Wilson, J. Marcelli, L. Laird
{"title":"Investigation of non-independent single event upsets in the TAOS GVSC static RAM","authors":"R. Hosken, R. Koga, B. Wilson, J. Marcelli, L. Laird","doi":"10.1109/REDW.1997.629798","DOIUrl":"https://doi.org/10.1109/REDW.1997.629798","url":null,"abstract":"Operation of the two TAOS Honeywell GVSC Flight Computers has been monitored over three years. SEUs in the Micron 32K/spl times/8 static RAM chips were characterized and some were found to have a common primary event.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129958056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Thin-film thermo-resistor radiation hardness experimental results 薄膜热电阻器辐射硬度实验结果
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629795
A. Nikiforov, V. A. Telets, V. S. Figurov
{"title":"Thin-film thermo-resistor radiation hardness experimental results","authors":"A. Nikiforov, V. A. Telets, V. S. Figurov","doi":"10.1109/REDW.1997.629795","DOIUrl":"https://doi.org/10.1109/REDW.1997.629795","url":null,"abstract":"Radiation hardness tests of thin-film thermo-resistors were carried out in the temperature range of -60...+125/spl deg/C with 1% accuracy. The total resistance deviations from initial values did not exceed 2% after the dose rate 2.7/spl middot/10/sup 10/ rad(Si)/s, total dose 1.8/spl middot/10/sup 5/ rad(Si)/s and neutron flux 2.4/spl middot/10/sup 12/ n/cm/sup 2/ irradiation.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123910003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results 辐射硬体CMOS ROM剂量率扰动:详细分析技术及结果
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629796
A. Nikiforov, V.N. Guminov, V. A. Telets
{"title":"Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results","authors":"A. Nikiforov, V.N. Guminov, V. A. Telets","doi":"10.1109/REDW.1997.629796","DOIUrl":"https://doi.org/10.1109/REDW.1997.629796","url":null,"abstract":"The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the \"RADON-5E\" pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier's upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128724210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total ionizing dose effects on 64 Mb 3.3 V DRAMs 总电离剂量对64mb 3.3 V dram的影响
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629805
C. Lee, D. Nguyen, A. Johnston
{"title":"Total ionizing dose effects on 64 Mb 3.3 V DRAMs","authors":"C. Lee, D. Nguyen, A. Johnston","doi":"10.1109/REDW.1997.629805","DOIUrl":"https://doi.org/10.1109/REDW.1997.629805","url":null,"abstract":"64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129838992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The effects of nuclear radiation on P-channel CCD imagers 核辐射对p通道CCD成像仪的影响
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629809
J. Spratt, B. Passenheim, R. Leadon
{"title":"The effects of nuclear radiation on P-channel CCD imagers","authors":"J. Spratt, B. Passenheim, R. Leadon","doi":"10.1109/REDW.1997.629809","DOIUrl":"https://doi.org/10.1109/REDW.1997.629809","url":null,"abstract":"Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than conventional N-channel CCDs. Proton and Co/sup 60/ testing of 1024/spl times/640 P-channel CCD imagers confirmed this prediction, showing significant reduction in CTE degradation compared to N-channel devices. Also, dark current data shows that \"hot pixel\" generation is significantly reduced in these devices.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134162542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Neutron SEU trends in avionics [memory chips] 航空电子设备中的中子SEU趋势[存储芯片]
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629800
N. Kerness, A. Taber
{"title":"Neutron SEU trends in avionics [memory chips]","authors":"N. Kerness, A. Taber","doi":"10.1109/REDW.1997.629800","DOIUrl":"https://doi.org/10.1109/REDW.1997.629800","url":null,"abstract":"Accelerator (proton and neutron) measurements of 44 memory device vintages, along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMs), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114500678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Radiation hardness assurance categories for COTS technologies COTS技术的辐射硬度保证类别
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629794
G. L. Hash, M. Shaneyfelt, F. Sexton, P. Winokur
{"title":"Radiation hardness assurance categories for COTS technologies","authors":"G. L. Hash, M. Shaneyfelt, F. Sexton, P. Winokur","doi":"10.1109/REDW.1997.629794","DOIUrl":"https://doi.org/10.1109/REDW.1997.629794","url":null,"abstract":"A comparison of the radiation tolerance of three commercial and one radiation hardened SRAM is presented for total dose, dose rate, and single event effects environments. The devices are categorized according to radiation hardness within each environment and the necessity of considering all applicable environments is enforced. Burn-in effects on radiation hardness are shown for each of the environments.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129523557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Honeywell radiation hardened 32-bit processor central processing unit, floating point processor, and cache memory dose rate and single event effects test results 霍尼韦尔辐射硬化32位处理器中央处理器，浮点处理器，和缓存存储器剂量率和单事件影响的测试结果
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629808
G. Brown, L. Hoffmann, S.C. Leavy, J.A. Mogensen, J. Brichacek
{"title":"Honeywell radiation hardened 32-bit processor central processing unit, floating point processor, and cache memory dose rate and single event effects test results","authors":"G. Brown, L. Hoffmann, S.C. Leavy, J.A. Mogensen, J. Brichacek","doi":"10.1109/REDW.1997.629808","DOIUrl":"https://doi.org/10.1109/REDW.1997.629808","url":null,"abstract":"We will present single event effects and dose rate test results for the Honeywell Radiation Hardened 32-Bit Processor Central Processing Unit, Floating Point Processor and Cache Memory. These three chip types comprise the processor core for a 32-bit radiation-hardened, fault-tolerant processor.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126815821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The single event upset characteristics of the 486-DX4 microprocessor 486-DX4微处理器的单事件干扰特性
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629797
C. Kouba, G. Choi
{"title":"The single event upset characteristics of the 486-DX4 microprocessor","authors":"C. Kouba, G. Choi","doi":"10.1109/REDW.1997.629797","DOIUrl":"https://doi.org/10.1109/REDW.1997.629797","url":null,"abstract":"This paper describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. The goal of this work was to experimentally characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. Three different heavy ions were used to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different commercial vendors. A consistent set of error modes were identified and the upset cross-sections were calculated. Results show a distinct difference in on-chip cache susceptibility, as well as a marked difference in vendor performance.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125441017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Device SEE susceptibility from heavy ions (1995-1996) 重离子对器件SEE的敏感性(1995-1996)
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI: 10.1109/REDW.1997.629790
D. Nichols, J. Coss, T. Miyahira, H. Schwartz, G. Swift, R. Koga, W. Crain, K. Crawford, S. Penzin
{"title":"Device SEE susceptibility from heavy ions (1995-1996)","authors":"D. Nichols, J. Coss, T. Miyahira, H. Schwartz, G. Swift, R. Koga, W. Crain, K. Crawford, S. Penzin","doi":"10.1109/REDW.1997.629790","DOIUrl":"https://doi.org/10.1109/REDW.1997.629790","url":null,"abstract":"A seventh set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications. SEE trends are indicated for several functional classes of ICs.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127594769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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