薄膜热电阻器辐射硬度实验结果

A. Nikiforov, V. A. Telets, V. S. Figurov
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引用次数: 1

摘要

在-60℃的温度范围内对薄膜热电阻器进行了辐射硬度试验。+125/spl度/C,精度为1%。辐照率为2.7/spl middot/10/sup 10/ rad(Si)/s,总剂量为1.8/spl middot/10/sup 5/ rad(Si)/s,中子通量为2.4/spl middot/10/sup 12/ n/cm/sup 2/辐照后,总电阻与初始值的偏差不超过2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thin-film thermo-resistor radiation hardness experimental results
Radiation hardness tests of thin-film thermo-resistors were carried out in the temperature range of -60...+125/spl deg/C with 1% accuracy. The total resistance deviations from initial values did not exceed 2% after the dose rate 2.7/spl middot/10/sup 10/ rad(Si)/s, total dose 1.8/spl middot/10/sup 5/ rad(Si)/s and neutron flux 2.4/spl middot/10/sup 12/ n/cm/sup 2/ irradiation.
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