Total ionizing dose effects on 64 Mb 3.3 V DRAMs

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI:10.1109/REDW.1997.629805

C. Lee, D. Nguyen, A. Johnston

引用次数: 2

Abstract

64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs.

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总电离剂量对64mb 3.3 V dram的影响

对两家不同厂家的64 Mb 3.3 V CMOS dram进行了总剂量测试。保留时间、电源电流和功能被用来表征设备的响应。在较低的总剂量水平下，烧毁的设备功能失效。结果表明，这些缩放后的dram的硬度大约是老一代16mb商用dram的两倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

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