Neutron SEU trends in avionics [memory chips]

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI:10.1109/REDW.1997.629800

N. Kerness, A. Taber

引用次数: 7

Abstract

Accelerator (proton and neutron) measurements of 44 memory device vintages, along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMs), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset.

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航空电子设备中的中子SEU趋势[存储芯片]

加速器(质子和中子)测量44个存储设备的复古，以及13年的航空电子处理器的经验，表明动态随机存取存储器(dram)，而不是静态随机存取存储器(sram)，可能成为未来的存储器的选择，以防止大气中子单事件扰乱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

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