{"title":"商用高密度存储器在低剂量率总电离剂量(TID)测试下的特性","authors":"A.K. Sharma, K. Sahu","doi":"10.1109/REDW.1997.629804","DOIUrl":null,"url":null,"abstract":"This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs\",\"authors\":\"A.K. Sharma, K. Sahu\",\"doi\":\"10.1109/REDW.1997.629804\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages.\",\"PeriodicalId\":328522,\"journal\":{\"name\":\"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.1997.629804\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.1997.629804","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs
This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages.