Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference Pub Date : 1997-07-24 DOI:10.1109/REDW.1997.629804

A.K. Sharma, K. Sahu

引用次数: 0

Abstract

This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages.

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商用高密度存储器在低剂量率总电离剂量(TID)测试下的特性

本文报道了低剂量率(0.04 ~ 0.08 rads (Si)/sec)总电离剂量(TID)对不同类型的商用高密度存储器的试验结果。本次评估中使用的部件代表了来自各种塑料和陶瓷封装制造商的5v和/或3.3 V版本的内存技术，如dram, sram, eeprom和闪存。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

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