通过微创技术实现商用CMOS工艺的辐射硬化

J. Benedetto, D. Kerwin, J. Chaffee
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引用次数: 17

摘要

UTMC微电子系统公司开发了两种微创耐辐射模块(rtm)来强化商用CMOS工艺。rtm已成功插入三个商业铸造厂。UTMC的硬化工作结果清楚地表明,在商业CMOS工艺上可以实现100至500 krad (SiO/sub 2/)的总剂量硬度,而不会显着改变商业流程。这个硬度等级是从最初的一组实验中得出的。从第一组实验中确定的响应因子,当充分优化时,可能显著提高最终总剂量硬度水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation hardening of commercial CMOS processes through minimally invasive techniques
UTMC Microelectronic Systems has developed two minimally invasive radiation tolerant modules (RTMs) to harden a commercial CMOS process. The RTMs were successfully inserted into three commercial foundries. The results of UTMC's hardening effort clearly demonstrate that a total dose hardness of between 100 to 500 krad (SiO/sub 2/) can be achieved on a commercial CMOS process without significantly altering the commercial flow. This hardness level is from an initial set of experiments. Response factors from this first set of experiments have been identified which, when fully optimized, may increase the final total dose hardness level significantly.
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