2016 20th International Symposium on VLSI Design and Test (VDAT)最新文献

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An effective test methodology enabling detection of weak bits in SRAMs: Case study in 28nm FDSOI 一种有效的测试方法,能够检测sram中的弱位:28nm FDSOI的案例研究
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064868
Nidhi Batra, Anil Kumar Gundu, M. Hashmi, G. Visweswaran, Anuj Grover
{"title":"An effective test methodology enabling detection of weak bits in SRAMs: Case study in 28nm FDSOI","authors":"Nidhi Batra, Anil Kumar Gundu, M. Hashmi, G. Visweswaran, Anuj Grover","doi":"10.1109/ISVDAT.2016.8064868","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064868","url":null,"abstract":"In advanced technology nodes, device variations limit the SRAM performance and yield. Cell stability defined by the Static Noise Margin (SNM) of the SRAM cell primarily governs the performance with respect to yield in SRAMs. Variations in the scaled SRAMs increase the probability of cells becoming weak. To ensure reliability of SRAMs it is important to identify such cells post silicon. In this work, we propose a correlation based test methodology to detect the weak bits in SRAMs with respect to SNM. We present a case study for 64×64 SRAM in 28nm FDSOI technology. The proposed methodology targets high speed testing and lower test costs. It enables to perform the test at nominal operating voltage and room temperature. Suitable read stress is induced by boosting the Word Line (WL) voltage of the 6T SRAM cell. To validate the effectiveness of the test and find appropriate test stress we propose correlation methodology. With this test we could detect the weak cells possessing SNM upto 60mV across various process corners for stress voltage ranging from 1.14V to 1.16V. Moreover, it requires minimal area penalty and test time compared to standard tests.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116080527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
JSCAN: A joint-scan DFT architecture to minimize test time, pattern volume, and power JSCAN:一种联合扫描DFT架构,可以最大限度地减少测试时间、模式体积和功耗
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064866
Jaynarayan T. Tudu
{"title":"JSCAN: A joint-scan DFT architecture to minimize test time, pattern volume, and power","authors":"Jaynarayan T. Tudu","doi":"10.1109/ISVDAT.2016.8064866","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064866","url":null,"abstract":"Traditionally, serial scan architecture have been predominantly used as a DFT technique for most of the designs. However, shrinking technology and increasing design complexity has brought a set of new test challenges. It initiates new research direction to explore innovative DFT architecture. This paper proposes a new DFT architecture, named as Joint-scan. The proposed architecture provides a solution for the test time, test data volume, and test power problems simultaneously. The primary idea here is to bring in the key advantages of serial scan and random access scan in a single architecture. The effectiveness of the proposed architecture has been demonstrated through experimental results by comparing with the state-of-the-art random access scan, and multiple sequential scan architecture. The results show promising reduction in test time, data volume, and test power.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114243916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Backward compatible MIL-STD-1553B analog transceiver upgrade for 100-Mb/s data rate 向后兼容MIL-STD-1553B模拟收发器升级为100 mb /s数据速率
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064845
P. Pendyala, V. Pasupureddi
{"title":"Backward compatible MIL-STD-1553B analog transceiver upgrade for 100-Mb/s data rate","authors":"P. Pendyala, V. Pasupureddi","doi":"10.1109/ISVDAT.2016.8064845","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064845","url":null,"abstract":"MIL-STD-1553B data buses are in use in almost all aircrafts and many ground-based military vehicles. But, present day aircraft equipments have much higher bandwidth requirements compared to what is offered by 1-Mb/s legacy 1553 system hardware. A complete rewiring would result in the aircrafts being non operational for a long time, in addition to its high cost of implementation. Instead, only the obsolete MIL-STD-1553 system-on-chip integrated circuits can be substituted to extend their functionality to higher data rates. In this work, we describe the operating principle and implementation of a low power transceiver upgrade which effectively equalizes a 1553 channel across the whole 100-MHz spectrum. Implemented in 0.18μm, this transceiver upgrade circuit achieves a BER of < 10−16 over a 300-ft 1553 bus while receiving 100-Mb/s data, with a total power consumption of 31.7 mW from a 3.3-V supply.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"2 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114929164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New stable loadless 6T dual-port SRAM cell design 新的稳定的无负载6T双端口SRAM单元设计
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064859
Antara Ganguly, Sangeeta Goyal, Sneha Bhatia, Anuj Grover
{"title":"New stable loadless 6T dual-port SRAM cell design","authors":"Antara Ganguly, Sangeeta Goyal, Sneha Bhatia, Anuj Grover","doi":"10.1109/ISVDAT.2016.8064859","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064859","url":null,"abstract":"Simultaneous read and write operations without any disturbance is a fundamental expectancy from any dual port static random access memory (DPSRAM) cell design. The paper proposes a stable loadless 6T DPSRAM cell design with reduced port setup time as compared to that of standard 8T DPSRAM along with better read stability. The design has lower cycle time allowing SRAM to operate at higher frequencies and hence, more memory can be accessed in a given time. To preserve the data integrity, an optimum port setup time is calculated using best fit curve from regression plots with 95% confidence bounds. As port setup time is increased, voltage value for spurious logic reduces. The proposed design has port setup time of 1.6 picoseconds as compared to 7.2 picoseconds of 8T DPSRAM.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125487147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design, integration and performance analysis of ΣΔ ADC for capacitive sensor interfacing 电容式传感器接口ΣΔ ADC的设计、集成及性能分析
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064892
P. Chatterjee, S. Kar, S. Sen
{"title":"Design, integration and performance analysis of ΣΔ ADC for capacitive sensor interfacing","authors":"P. Chatterjee, S. Kar, S. Sen","doi":"10.1109/ISVDAT.2016.8064892","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064892","url":null,"abstract":"Micro-Electro-Mechanical System (MEMS) sensors are integrated with suitable signal conditioning unit (SCU) to provide usable output. Though the output of the SCU can be either analog or digital, digital output is often required in many system applications where other components are mostly digital. This work integrates a sigma-delta (ΣΔ) Analog to Digital Converter (ADC) with an analog front-end for capacitive sensor applications. The ΣΔ ADC is designed and fabricated in UMC 180 nm CMOS process along with the analog front-end. Peak SNR of 40 dB is achieved which corresponds to 7 bits of resolution. The entire system can be used up to 1 kHz signal frequency.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126741836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Energy-efficient reconfigurable framework for evaluating hybrid NoCs 评估混合noc的节能可重构框架
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064902
Raghav Kishore, H. Mondal, Sujay Deb
{"title":"Energy-efficient reconfigurable framework for evaluating hybrid NoCs","authors":"Raghav Kishore, H. Mondal, Sujay Deb","doi":"10.1109/ISVDAT.2016.8064902","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064902","url":null,"abstract":"The advancements in emerging interconnects for Networks-on-Chip (NoCs) brings with it promising solutions to integrate single-hop long-range high-bandwidth on-chip links to achieve enhanced network performance. The use of these lie in the design of modern heterogeneous systems with increasing number of processing blocks, which may include application specific unconventional topologies. In this work, we present a reconfigurable simulation framework that enables evaluation of such complex designs and in the process, introduce a new cost-effective metric based on network utilization and illustrate how it can be exploited to achieve energy efficient NoCs by implementing low power design strategies like Dynamic Voltage Scaling (DVS) and power-gating. An experimental setup and evaluation follows for both regular and hybrid topologies under synthetic and application specific traffic. This work will enable quick and detailed evaluation of hybrid topologies. The results achieved clearly establish the cost-effectiveness of the proposed framework.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127134037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Programmable output switched capacitor step-down DC-DC converter with high accuracy using Sigma-Delta Feedback Control Loop 高精度的可编程输出开关电容降压DC-DC变换器,采用Sigma-Delta反馈控制回路
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064883
Mahesh Zanwar, S. Sen
{"title":"Programmable output switched capacitor step-down DC-DC converter with high accuracy using Sigma-Delta Feedback Control Loop","authors":"Mahesh Zanwar, S. Sen","doi":"10.1109/ISVDAT.2016.8064883","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064883","url":null,"abstract":"This paper describes the CMOS implementation of variable output voltage, multiphase switched capacitor step-down DC-DC converter with a large number of target voltages using Sigma-Delta Feedback Control Loop. The number of target voltages generated using n-flying capacitors are of the order of 2n. Expressions for equivalent series resistance Req, conduction, switching power loss and efficiency are obtained and compared with the spice simulation results. The Sigma-Delta Feedback Control Loop is designed which automatically switch between various target voltages and simulated in Cadence Analog-Mixed Signal flow. The Sigma-Delta feedback controller has a very high gain at DC and hence gives higher accuracy as compared to alternative methods. The 3/4 step-down converter circuit is described and analyzed by varying switching frequency and load for different values of bottom plate parasitic capacitance. An efficiency of about 77.3% is achieved with 10% bottom plate parasitic capacitance for a load current of 135 uA and input voltage of 1.8 V at 2 MHz of switching frequency. The load regulation of 7.33 mV/mA and line regulation of 6.5 mV/V is achieved.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134363244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimal design flow of CMOS doubler-based rectifiers CMOS倍频整流器的优化设计流程
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064885
Soumik Sarkar, Gaurav Saini, Mahima Arrawatia, M. Baghini
{"title":"Optimal design flow of CMOS doubler-based rectifiers","authors":"Soumik Sarkar, Gaurav Saini, Mahima Arrawatia, M. Baghini","doi":"10.1109/ISVDAT.2016.8064885","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064885","url":null,"abstract":"This paper proposes an optimal design flow for designing CMOS doubler based rectifiers. The work uses a simulation-based approach, considering important bounds on the size of the components. A way for comparing and predicting the performance of diodes made of various devices has been presented. The flow is specifically shown in the context of Radio-Frequency (RF) energy harvesting application. However the flow can be also extended to other application scenarios. The design flow is explained using diode characteristics and is independent of the device and technology used to make the diode. The flow has been demonstrated by comparing doubler-based rectifiers designed with this flow with two earlier works in 180nm CMOS technology. In one case the power delivered to the load has increased more than 1.8 times, and in the other case the area is 2/3 of the area used in the previous work.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133380509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis aware sample preparation techniques using random sample sets in DMFB 在DMFB中使用随机样品集的合成感知样品制备技术
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064872
P. Roy, S. Chakraborty, H. Rahaman
{"title":"Synthesis aware sample preparation techniques using random sample sets in DMFB","authors":"P. Roy, S. Chakraborty, H. Rahaman","doi":"10.1109/ISVDAT.2016.8064872","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064872","url":null,"abstract":"Digital Microfluidic Biochips in recent years have emerged as a major feasible alternative platform for droplet based microfluidic operations within a miniaturized substrate. These devices find applications in the areas involving medical diagnostics, biochemical analysis and environmental toxicity monitoring issues. Formation of the sequencing graph for sample preparation followed by architecture level synthesis is the initial primary procedure for design automation of DMFBs. In this paper we proposed a technique for sample preparation using base solutions for a given random set of samples. The technique is developed to be synthesis aware in order to enable efficient use of resources in terms of modules for pipelined synthesis. The advantages of the proposed method is i) optimal resource utilization in terms of number of modules and samples and ii) efficient enhancement in overall execution time for the bioassay. The simulation is carried out with a given set of random samples as well as with a specified set of samples with Gaussian distribution. The results show encouraging improvements in i) number of sample utilizations, ii)number of mix-split operations iii)the formation of the number of waste droplets and iv) the actual number of modules used for execution of the overall bioassay.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124830742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A method to design a comparator for sampled data processing applications 一种用于采样数据处理应用的比较器设计方法
2016 20th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2016-05-01 DOI: 10.1109/ISVDAT.2016.8064863
Rama Prasad Acharya, Abir J. Mondal, A. Majumder
{"title":"A method to design a comparator for sampled data processing applications","authors":"Rama Prasad Acharya, Abir J. Mondal, A. Majumder","doi":"10.1109/ISVDAT.2016.8064863","DOIUrl":"https://doi.org/10.1109/ISVDAT.2016.8064863","url":null,"abstract":"The performance of a comparator is significantly affected by the time taken to determine the unequal bit location so as to decide greater than, less than and equal to condition. Consequently, the delay will increase with the number of bits of a comparator. The reduction in delay so as to improve performance can be achieved with the introduction of multilevel look-ahead circuit. In this work, a unique architecture of comparator with look-ahead circuit is introduced to reduce the worst case delay and to improve the overall performance. First, a multilevel look-ahead circuit is described to reduce the critical path delay effectively. Secondly, the realization of the comparator and multilevel look-ahead circuit using domino logic significantly reduces the complexity of the entire architecture. At first, a 4-bit unit cell is designed using domino logic. Thereafter, an 8-bit macro is realized using the unit cell. Further, 16-bit, 32-bit and 64-bit circuits are developed using the proposed 8-bit macro and multilevel look-ahead circuit. Simulation results show that the proposed 64-bit circuit has improved power dissipation compared to existing architectures. Moreover, the worst case delay has reduced significantly and the entire operation can be performed in a single clock cycle.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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