IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)最新文献

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Methods to reduce radiation from split ground plane structures [packaging] 减少劈裂地平面结构辐射的方法[封装]
T. E. Moran, K.L. Virga, G. Aguirre, J. Prince
{"title":"Methods to reduce radiation from split ground plane structures [packaging]","authors":"T. E. Moran, K.L. Virga, G. Aguirre, J. Prince","doi":"10.1109/EPEP.1999.819226","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819226","url":null,"abstract":"Methods to reduce radiation from split-ground planes are examined using FDTD analysis. While differential lines and RF chokes to prove to be reasonable solutions, using a corrugated slot is shown to be the simplest and most effective measure.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124436640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Distributed effects of a gap in power/ground planes 电源/地平面间隙的分布效应
D. Duan, B. Rubin, J. Magerlein
{"title":"Distributed effects of a gap in power/ground planes","authors":"D. Duan, B. Rubin, J. Magerlein","doi":"10.1109/EPEP.1999.819227","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819227","url":null,"abstract":"A signal line running between two PCB power/ground planes, with one of the planes having a gap (split), was analyzed using full-wave electromagnetic tools. The gap inductance and the mutual coupling caused by the gap were examined, and distributed effects were observed. As a conclusion, a gap should always be AC-shorted, preferably in the immediate vicinity of critical signal lines.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132911257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Modeling and transient simulation of planes in electronic packages for GHz systems GHz系统电子封装中平面的建模和瞬态仿真
N. Na, M. Swaminathan
{"title":"Modeling and transient simulation of planes in electronic packages for GHz systems","authors":"N. Na, M. Swaminathan","doi":"10.1109/EPEP.1999.819214","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819214","url":null,"abstract":"This paper presents a modeling and simulation approach for ground/power planes in high speed packages. The electrical characteristics of a plane structure are derived in terms of an impedance (Z) or scattering (S) matrix at port locations in the frequency domain by solving Maxwell's equations. Since the solution is a closed form equation, the frequency and transient response can be computed efficiently, requiring small computing time. The response of the plane structure has been captured using rational functions. These functions, which are SPICE-compatible, enable the connection of plane models to the rest of the package for simulation. The frequency and transient response computed using the analytical expression and rational functions have been compared against measurements. The simulation results show good correlation with measured data.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131649857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Interconnect limits on gigascale integration 千兆级集成的互连限制
J. Meindl
{"title":"Interconnect limits on gigascale integration","authors":"J. Meindl","doi":"10.7567/SSDM.1999.P-2","DOIUrl":"https://doi.org/10.7567/SSDM.1999.P-2","url":null,"abstract":"Summary form only given. From the inception of microelectronics in 1959 until the early 1990s, transistors dominated both IC performance and cost, while interconnects were of secondary importance. In recent years, this hegemony has largely dissipated. Interconnects have become critical determinants of IC performance and cost. The nature of this shift can be illustrated by the fact that for late 1980s 1 /spl mu/m technology, the intrinsic switching delay of an unloaded MOSFET approaches 10 ps while 1 mm interconnect response time is approximately 1 ps, but for early 2000 0.1 /spl mu/m technology, intrinsic MOSFET delay decreases to about 1 ps, while 1 mm interconnect response time increases to 100 ps. The latency of a 1 mm interconnect devolves from one decade faster to two decades slower than transistor delay. Concurrent with this signal wiring dilemma, clock frequency is increasing by 100/spl times/ placing stringent new demands on the chip clock distribution network interconnects. Supply current is increasing by 60/spl times/ while supply voltage scales downward by 5/spl times/, imposing a huge new burden on the power distribution network interconnects. Maximum total wire length per chip increases by 50/spl times/, and chip-to-package I/O interconnect count increases by 10-20/spl times/. Early 21st century opportunities for GSI will thus be governed by an interconnect dominated hierarchy of theoretical and practical limits whose five levels are codified as fundamental, material, device, circuit and system. Systematic exploration of this hierarchy of limits reveals salient opportunities to address the interconnect problem.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121158494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Noise measurements on Power4 Test chip 在Power4测试芯片上的噪声测量
A. Haridass, N. James, B. McCredie
{"title":"Noise measurements on Power4 Test chip","authors":"A. Haridass, N. James, B. McCredie","doi":"10.1109/EPEP.1999.819186","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819186","url":null,"abstract":"This paper describes on-chip noise measured on the Power4 Test chip and its impact on the performance of clock and logic circuitry on the chip. It also summarizes the effect of on-module decoupling capacitors on the on-chip noise. The Power4 Test chip was fabricated in 0.1 /spl mu/m effective channel length, 7 metal layer Cu, 1.5 V CMOS silicon-on-insulator technology. The test chip was designed to demonstrate technology feasibility and to facilitate chip and circuit design methodologies for the design of a 1 GHz microprocessor.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of meander line delay in circuit boards 线路板中曲线延迟的研究
B. Rubin, B. Singh
{"title":"Study of meander line delay in circuit boards","authors":"B. Rubin, B. Singh","doi":"10.1109/EPEP.1999.819224","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819224","url":null,"abstract":"A full-wave electromagnetic analysis using the moment method was performed on a set of meander lines located in a circuit board to determine the effect of meander pitch on delay. Detailed sensitivity studies performed on gridding, skin-effect models, and frequency content confirm the accuracy of these results.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116034865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 80
Latency insertion method for the fast simulation of interconnection networks 互连网络快速仿真的延迟插入方法
J. Schutt-Ainé
{"title":"Latency insertion method for the fast simulation of interconnection networks","authors":"J. Schutt-Ainé","doi":"10.1109/EPEP.1999.819237","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819237","url":null,"abstract":"In this work, a finite difference formulation is used to simulate large interconnection networks. The method introduces reactive latency in all branches and nodes of the circuit to generate update algorithms for the voltage and current quantities. Due to its linear numerical complexity, several orders of magnitude in speed-up are obtained over standard methods. The method is relatively simple, easy to implement, and highly scalable. It has linear complexity and since it uses a time-domain formulation, it is suitable for handling nonlinear elements in an efficient manner.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121888970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate 损耗硅衬底上单片和耦合片上互连的等效电路建模
Ji Zheng, Y. Hahm, A. Weisshaar, V. K. Tripathi
{"title":"Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate","authors":"Ji Zheng, Y. Hahm, A. Weisshaar, V. K. Tripathi","doi":"10.1109/EPEP.1999.819222","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819222","url":null,"abstract":"A CAD-oriented modeling approach for on-chip interconnects on lossy silicon substrates is presented. The frequency-dependent line parameters for single and coupled interconnects are obtained by a modified spectral domain approach that takes into account both the shunt and longitudinal substrate currents. Equivalent circuit models with ideal lumped elements, representing the broadband characteristics of the interconnects, are extracted. The response of the proposed SPICE-compatible models is in excellent agreement with the frequency-dependent characteristics of the interconnects.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126293030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Power distribution modeling and decoupling of multilayer printed circuit board 多层印刷电路板的功率分布建模与解耦
J. Bandyopadhyay
{"title":"Power distribution modeling and decoupling of multilayer printed circuit board","authors":"J. Bandyopadhyay","doi":"10.1109/EPEP.1999.819203","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819203","url":null,"abstract":"Determining the proper number and value of decoupling capacitors for boards/cards is always a challenging issue for board/card designers. Lack of proper analysis leads to either conservative or aggressive design. This paper presents a methodology for determining the right number and location of decoupling capacitors for a card/board through detailed board modeling. An example has been provided to demonstrate the effect of decoupling capacitors in reducing induced dI/dt noise for a multilayer CPU card with PowerPCT/sup TM/ processor used in IBM's RS/6000 machine.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125493366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
High-performance silicon MMIC interconnect for millimeter wave wireless communication 用于毫米波无线通信的高性能硅MMIC互连
Juno Kim, Y. Qian, Guojin Feng, P. Ma, M. Chang, T. Itoh
{"title":"High-performance silicon MMIC interconnect for millimeter wave wireless communication","authors":"Juno Kim, Y. Qian, Guojin Feng, P. Ma, M. Chang, T. Itoh","doi":"10.1109/EPEP.1999.819233","DOIUrl":"https://doi.org/10.1109/EPEP.1999.819233","url":null,"abstract":"This paper presents the authors' latest efforts to develop high performance interconnects for mixed signal silicon MMICs in the millimeter wave regime. The proposed silicon/metal/polyimide (SIMPOL) interconnect is extremely effective in reducing the crosstalk noise with low insertion loss. Measured results of a prototype test wafer demonstrate 0.33 dB/mm insertion loss at 30 GHz, and excellent noise isolation comparable to background noise over the entire frequency range up to 50 GHz.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131711231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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