损耗硅衬底上单片和耦合片上互连的等效电路建模

Ji Zheng, Y. Hahm, A. Weisshaar, V. K. Tripathi
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引用次数: 11

摘要

提出了一种面向cad的有损硅衬底片上互连的建模方法。单个和耦合互连的频率相关线路参数是通过考虑分流和纵向衬底电流的改进谱域方法获得的。提取了具有理想集总元的等效电路模型,代表了互连的宽带特性。所提出的spice兼容模型的响应与互连的频率相关特性非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Equivalent circuit modeling of single and coupled on-chip interconnects on lossy silicon substrate
A CAD-oriented modeling approach for on-chip interconnects on lossy silicon substrates is presented. The frequency-dependent line parameters for single and coupled interconnects are obtained by a modified spectral domain approach that takes into account both the shunt and longitudinal substrate currents. Equivalent circuit models with ideal lumped elements, representing the broadband characteristics of the interconnects, are extracted. The response of the proposed SPICE-compatible models is in excellent agreement with the frequency-dependent characteristics of the interconnects.
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