千兆级集成的互连限制

J. Meindl
{"title":"千兆级集成的互连限制","authors":"J. Meindl","doi":"10.7567/SSDM.1999.P-2","DOIUrl":null,"url":null,"abstract":"Summary form only given. From the inception of microelectronics in 1959 until the early 1990s, transistors dominated both IC performance and cost, while interconnects were of secondary importance. In recent years, this hegemony has largely dissipated. Interconnects have become critical determinants of IC performance and cost. The nature of this shift can be illustrated by the fact that for late 1980s 1 /spl mu/m technology, the intrinsic switching delay of an unloaded MOSFET approaches 10 ps while 1 mm interconnect response time is approximately 1 ps, but for early 2000 0.1 /spl mu/m technology, intrinsic MOSFET delay decreases to about 1 ps, while 1 mm interconnect response time increases to 100 ps. The latency of a 1 mm interconnect devolves from one decade faster to two decades slower than transistor delay. Concurrent with this signal wiring dilemma, clock frequency is increasing by 100/spl times/ placing stringent new demands on the chip clock distribution network interconnects. Supply current is increasing by 60/spl times/ while supply voltage scales downward by 5/spl times/, imposing a huge new burden on the power distribution network interconnects. Maximum total wire length per chip increases by 50/spl times/, and chip-to-package I/O interconnect count increases by 10-20/spl times/. Early 21st century opportunities for GSI will thus be governed by an interconnect dominated hierarchy of theoretical and practical limits whose five levels are codified as fundamental, material, device, circuit and system. Systematic exploration of this hierarchy of limits reveals salient opportunities to address the interconnect problem.","PeriodicalId":299335,"journal":{"name":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Interconnect limits on gigascale integration\",\"authors\":\"J. Meindl\",\"doi\":\"10.7567/SSDM.1999.P-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. From the inception of microelectronics in 1959 until the early 1990s, transistors dominated both IC performance and cost, while interconnects were of secondary importance. In recent years, this hegemony has largely dissipated. Interconnects have become critical determinants of IC performance and cost. The nature of this shift can be illustrated by the fact that for late 1980s 1 /spl mu/m technology, the intrinsic switching delay of an unloaded MOSFET approaches 10 ps while 1 mm interconnect response time is approximately 1 ps, but for early 2000 0.1 /spl mu/m technology, intrinsic MOSFET delay decreases to about 1 ps, while 1 mm interconnect response time increases to 100 ps. The latency of a 1 mm interconnect devolves from one decade faster to two decades slower than transistor delay. Concurrent with this signal wiring dilemma, clock frequency is increasing by 100/spl times/ placing stringent new demands on the chip clock distribution network interconnects. Supply current is increasing by 60/spl times/ while supply voltage scales downward by 5/spl times/, imposing a huge new burden on the power distribution network interconnects. Maximum total wire length per chip increases by 50/spl times/, and chip-to-package I/O interconnect count increases by 10-20/spl times/. Early 21st century opportunities for GSI will thus be governed by an interconnect dominated hierarchy of theoretical and practical limits whose five levels are codified as fundamental, material, device, circuit and system. Systematic exploration of this hierarchy of limits reveals salient opportunities to address the interconnect problem.\",\"PeriodicalId\":299335,\"journal\":{\"name\":\"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.1999.P-2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 8th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.99TH8412)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.1999.P-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 36

摘要

只提供摘要形式。从1959年微电子技术的诞生到20世纪90年代初,晶体管在集成电路的性能和成本上占据主导地位,而互连则是次要的。近年来,这种霸权已基本消失。互连已成为IC性能和成本的关键决定因素。这种转变的本质可以说明了这样一个事实:1980年代末1 / splμm技术的内在转换延迟卸货MOSFET接近10 ps 1毫米互连响应时间大约是1 ps,但2000年初0.1 / splμm技术,内在MOSFET延迟减少约ps,而1毫米互连响应时间增加到100 ps。1毫米互连延迟的影片从一个快十年到二十年低于晶体管延迟。在这种信号布线困境的同时,时钟频率增加了100/spl倍,对芯片时钟分配网络互连提出了严格的新要求。供电电流增加了60倍,而供电电压下降了5倍,给配电网互连带来了巨大的新负担。每个芯片的最大总导线长度增加了50/spl倍,芯片到封装的I/O互连计数增加了10-20/spl倍。因此,21世纪初GSI的机会将受到理论和实践限制的互连主导层次的支配,其五个层次被编纂为基础、材料、设备、电路和系统。对这种限制层次的系统探索揭示了解决互连问题的突出机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interconnect limits on gigascale integration
Summary form only given. From the inception of microelectronics in 1959 until the early 1990s, transistors dominated both IC performance and cost, while interconnects were of secondary importance. In recent years, this hegemony has largely dissipated. Interconnects have become critical determinants of IC performance and cost. The nature of this shift can be illustrated by the fact that for late 1980s 1 /spl mu/m technology, the intrinsic switching delay of an unloaded MOSFET approaches 10 ps while 1 mm interconnect response time is approximately 1 ps, but for early 2000 0.1 /spl mu/m technology, intrinsic MOSFET delay decreases to about 1 ps, while 1 mm interconnect response time increases to 100 ps. The latency of a 1 mm interconnect devolves from one decade faster to two decades slower than transistor delay. Concurrent with this signal wiring dilemma, clock frequency is increasing by 100/spl times/ placing stringent new demands on the chip clock distribution network interconnects. Supply current is increasing by 60/spl times/ while supply voltage scales downward by 5/spl times/, imposing a huge new burden on the power distribution network interconnects. Maximum total wire length per chip increases by 50/spl times/, and chip-to-package I/O interconnect count increases by 10-20/spl times/. Early 21st century opportunities for GSI will thus be governed by an interconnect dominated hierarchy of theoretical and practical limits whose five levels are codified as fundamental, material, device, circuit and system. Systematic exploration of this hierarchy of limits reveals salient opportunities to address the interconnect problem.
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