High-performance silicon MMIC interconnect for millimeter wave wireless communication

Juno Kim, Y. Qian, Guojin Feng, P. Ma, M. Chang, T. Itoh
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引用次数: 6

Abstract

This paper presents the authors' latest efforts to develop high performance interconnects for mixed signal silicon MMICs in the millimeter wave regime. The proposed silicon/metal/polyimide (SIMPOL) interconnect is extremely effective in reducing the crosstalk noise with low insertion loss. Measured results of a prototype test wafer demonstrate 0.33 dB/mm insertion loss at 30 GHz, and excellent noise isolation comparable to background noise over the entire frequency range up to 50 GHz.
用于毫米波无线通信的高性能硅MMIC互连
本文介绍了作者在毫米波条件下为混合信号硅mmic开发高性能互连的最新努力。所提出的硅/金属/聚酰亚胺(SIMPOL)互连在降低串扰噪声和低插入损耗方面非常有效。原型测试晶片的测量结果表明,在30 GHz时插入损耗为0.33 dB/mm,并且在高达50 GHz的整个频率范围内具有与背景噪声相当的优异噪声隔离性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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