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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.最新文献

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A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator 一种sigehbt 24ghz次谐波直接转换iq解调器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398214
P. Lindberg, E. Öjefors, Ertugrul Sönmez, A. Rydberg
{"title":"A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator","authors":"P. Lindberg, E. Öjefors, Ertugrul Sönmez, A. Rydberg","doi":"10.1109/SMIC.2004.1398214","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398214","url":null,"abstract":"The paper presents an IQ-demodulator for use in a 24 GHz direct conversion receiver. The circuit has been monolithically implemented in a commercial SiGe HBT process production line using a standard (20 /spl Omega/cm) substrate. Measured results show a conversion gain of 11 dB, a LO/RF isolation of 35 dB and a 1-dB compression point of -10 dBm while consuming 101 mA at 3 V Vcc.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115944318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process 1- 6ghz单片上变频混频器，输入/输出有源平衡采用SiGe HBT工艺
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398156
Sang-Heung Lee, H. Bae, Seung-Yun Lee, Jongdae Kim, Bo Woo Kim, Jin-Yeong Kang
{"title":"A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process","authors":"Sang-Heung Lee, H. Bae, Seung-Yun Lee, Jongdae Kim, Bo Woo Kim, Jin-Yeong Kang","doi":"10.1109/SMIC.2004.1398156","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398156","url":null,"abstract":"In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115356661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Reliability investigation on a fully suspended redundancy ring 全悬架冗余环的可靠性研究
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398193
F. Flourens, D. Peyrou, K. Yacine, S. Mellé, K. Grenier, D. Dubuc, A. Boukabache, P. Pons, R. Plana
{"title":"Reliability investigation on a fully suspended redundancy ring","authors":"F. Flourens, D. Peyrou, K. Yacine, S. Mellé, K. Grenier, D. Dubuc, A. Boukabache, P. Pons, R. Plana","doi":"10.1109/SMIC.2004.1398193","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398193","url":null,"abstract":"This paper reports on the reliability investigation on a suspended redundancy ring for millimeter wave applications. Mechanical characterization has shown no major failure when an original method is presented to investigate the charging effect in a capacitive MEMS.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125999823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of characterization methods for micromachined embedded test structures 微机械嵌入式测试结构表征方法的发展
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398234
E. Davies-venn, T. Pan, Antonio Baldi, Rhonda F. Drayton, Babak Ziaie
{"title":"Development of characterization methods for micromachined embedded test structures","authors":"E. Davies-venn, T. Pan, Antonio Baldi, Rhonda F. Drayton, Babak Ziaie","doi":"10.1109/SMIC.2004.1398234","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398234","url":null,"abstract":"Methods of characterizing low frequency embedded passives on silicon substrates are suggested. Durioid fixtures and on-wafer methods are discussed for extracting Q factor of embedded coils on high and low resistivity silicon. Feedline designs are discuss and data is presented regarding the performance limitation of CPW based design architectures. A quality (Q) factor of an embedded inductor > 50 is successfully extracted for operation below 1 GHz based on a 15 turn configuration using S-parameter measurements. Finally inductor performance in terms of Q factor is presented based on on-wafer measurements.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126862072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 10GHz nonlinear cosine-weighted digital-to-analog converter for high-speed direct digital synthesis 用于高速直接数字合成的10GHz非线性余弦加权数模转换器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398170
Dayu Yang, F. Dai
{"title":"A 10GHz nonlinear cosine-weighted digital-to-analog converter for high-speed direct digital synthesis","authors":"Dayu Yang, F. Dai","doi":"10.1109/SMIC.2004.1398170","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398170","url":null,"abstract":"A SiGe cosine-weighted digital-to-analog converter (DAC) with 10 GHz sampling rate is presented. The nonlinear DAC is used in a direct digital synthesis (DDS) to replace the conventional look up table and the linear DAC. It takes the advantage of high switching speed of SiGe current switches and uses the current mode logic (CML) circuits to realize the digital control logic. The DAC is designed using a 47 GHz SiGe technology and achieves a maximum 5 GHz output frequency with 10 GHz clock.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123439845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A low power 5 GHz direct digital synthesizer designed in SiGe technology 采用SiGe技术设计的低功耗5ghz直接数字合成器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398157
F. Dai, Lakshmi S. J. Chimakurthy, D. Yang, J. Huang, R. Jaeger
{"title":"A low power 5 GHz direct digital synthesizer designed in SiGe technology","authors":"F. Dai, Lakshmi S. J. Chimakurthy, D. Yang, J. Huang, R. Jaeger","doi":"10.1109/SMIC.2004.1398157","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398157","url":null,"abstract":"This paper presents a low power high-speed direct digital synthesizer (DDS), designed in a 47 GHz SiGe technology. The ROM-less DDS includes an 8-bit accumulator and an 8 bit cosine-weighted digital-to-analog converter (DAC) operating at a maximum 5 GHz clock frequency. The DDS core occupies an area of 2 mm/sup 2/ and consumes less than 2 W power with a 3.3 V supply voltage. The 5 GHz MMIC provides a frequency synthesis and modulation means for L-band applications.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122745986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Design of a monolithic 30 GHz branch line coupler in SiGe HBT technology using 3D EM simulation 基于SiGe HBT技术的单片30ghz支路耦合器的三维电磁仿真设计
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398222
Jongsoo Lee, Y. Tretiakov, J. Cressler, A. Joseph
{"title":"Design of a monolithic 30 GHz branch line coupler in SiGe HBT technology using 3D EM simulation","authors":"Jongsoo Lee, Y. Tretiakov, J. Cressler, A. Joseph","doi":"10.1109/SMIC.2004.1398222","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398222","url":null,"abstract":"We use full 3D EM simulation to optimize the design of a 30 GHz branch line coupler using thin film microstrip lines (TFMS) in a commercial 120 GHz SiGe HBT BiCMOS technology. The effects of various ground plane connections are considered for designing the branch line coupler. With an improper design of the ground plane in the TFMS, the measured S/sub 21/ shows 7 dB degradation at 30 GHz, in agreement with simulation. A carefully optimized coupler design shows that -4 dB S/sub 21//S/sub 31/ with -15 dB reflection coefficient at 30 GHz should be achievable.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124640436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-Q variable inductor using redistributed layers for Si RF circuits 采用重分布层的高q可变电感用于Si射频电路
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398199
H. Sugawara, H. Ito, K. Okada, K. Itoi, M. Sato, H. Abe, T. Ito, K. Masu
{"title":"High-Q variable inductor using redistributed layers for Si RF circuits","authors":"H. Sugawara, H. Ito, K. Okada, K. Itoi, M. Sato, H. Abe, T. Ito, K. Masu","doi":"10.1109/SMIC.2004.1398199","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398199","url":null,"abstract":"We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132568058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
62-GHz 24-mW static SiGe frequency divider 62-GHz 24mw静态SiGe分频器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398153
H. Knapp, M. Wurzer, K. Aufinger, J. Bock, T. Meister
{"title":"62-GHz 24-mW static SiGe frequency divider","authors":"H. Knapp, M. Wurzer, K. Aufinger, J. Bock, T. Meister","doi":"10.1109/SMIC.2004.1398153","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398153","url":null,"abstract":"We present a static frequency divider with a divide ratio of 16. The circuit is realized in current-mode logic (CML) and operates up to a maximum frequency of 62 GHz. The first master-slave flip-flop uses shunt peaking and consumes only 4 mW from a 2 V supply. The total supply current including all four divider stages and buffers is 12 mA. The circuit is manufactured in a 200-GHz f/sub T/ SiGe bipolar process.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134267498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Battery-less wireless communication system through human body for in-vivo healthcare chip 无电池无线通信系统通过人体进行体内医疗芯片
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398235
Tomohiro Yamada, T. Uezono, H. Sugawara, K. Okada, K. Masu, A. Oki, Y. Horiike
{"title":"Battery-less wireless communication system through human body for in-vivo healthcare chip","authors":"Tomohiro Yamada, T. Uezono, H. Sugawara, K. Okada, K. Masu, A. Oki, Y. Horiike","doi":"10.1109/SMIC.2004.1398235","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398235","url":null,"abstract":"This paper proposes a battery-less wireless communication system for in-vivo healthcare chip. We measured attenuation characteristics through a human body equivalent for six frequencies. Measured attenuation of 13.56 MHz is 47 dB through 15 cm thickness of human body equivalent. It is too difficult to use the usual modulations under such low power consumption. Then, we implemented the proposed system using the 13-56 MHz band with pulse interval modulation (PIM). In the simulated result, 16 mV of output voltage can be obtained at the outside receiver when coupling factor is 0.1. We also investigate antenna structure, and a tablet structure is suitable for the proposed system.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124109176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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