P. Lindberg, E. Öjefors, Ertugrul Sönmez, A. Rydberg
{"title":"一种sigehbt 24ghz次谐波直接转换iq解调器","authors":"P. Lindberg, E. Öjefors, Ertugrul Sönmez, A. Rydberg","doi":"10.1109/SMIC.2004.1398214","DOIUrl":null,"url":null,"abstract":"The paper presents an IQ-demodulator for use in a 24 GHz direct conversion receiver. The circuit has been monolithically implemented in a commercial SiGe HBT process production line using a standard (20 /spl Omega/cm) substrate. Measured results show a conversion gain of 11 dB, a LO/RF isolation of 35 dB and a 1-dB compression point of -10 dBm while consuming 101 mA at 3 V Vcc.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator\",\"authors\":\"P. Lindberg, E. Öjefors, Ertugrul Sönmez, A. Rydberg\",\"doi\":\"10.1109/SMIC.2004.1398214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents an IQ-demodulator for use in a 24 GHz direct conversion receiver. The circuit has been monolithically implemented in a commercial SiGe HBT process production line using a standard (20 /spl Omega/cm) substrate. Measured results show a conversion gain of 11 dB, a LO/RF isolation of 35 dB and a 1-dB compression point of -10 dBm while consuming 101 mA at 3 V Vcc.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator
The paper presents an IQ-demodulator for use in a 24 GHz direct conversion receiver. The circuit has been monolithically implemented in a commercial SiGe HBT process production line using a standard (20 /spl Omega/cm) substrate. Measured results show a conversion gain of 11 dB, a LO/RF isolation of 35 dB and a 1-dB compression point of -10 dBm while consuming 101 mA at 3 V Vcc.