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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.最新文献

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Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique 使用新的四端口自校准提取技术精确表征110 GHz的交流晶体管
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398224
Q. Liang, W.-M.L. Kuo, J. Cressler, G. Niu, A. Joseph, D. Harame
{"title":"Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique","authors":"Q. Liang, W.-M.L. Kuo, J. Cressler, G. Niu, A. Joseph, D. Harame","doi":"10.1109/SMIC.2004.1398224","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398224","url":null,"abstract":"A new self-calibrated extraction technique for transistor characterization to 110 GHz is presented. This technique offers an on-wafer, four-port extraction approach which greatly improves the measurement accuracy at high frequencies (e.g., f > 30 GHz). In contrast to conventional parasitics-deembedding methodologies (i.e. \"open-short\"), the present technique requires no additional calibration (e.g., SOLT, LRRM, or TRL) before measurements. The proposed method is first simulated, and then applied to 110 GHz S-parameter measurements of state-of-the-art SiGe HBTs to demonstrate its utility. The results, both theoretical and experimental, show that the proposed method represents a robust, self-calibrated approach for obtaining better accuracy in MM-wave transistor characterization.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125059294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems 用于10gb /s光通信系统的高电阻率硅行波放大器的设计与表征
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398169
F. De Paola, L. D. de Vreede, L. Nanver, N. Rinaldi, J. Burghartz
{"title":"Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems","authors":"F. De Paola, L. D. de Vreede, L. Nanver, N. Rinaldi, J. Burghartz","doi":"10.1109/SMIC.2004.1398169","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398169","url":null,"abstract":"A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gbit/s driver operation for a 13/15 GHz (f/sub T//f/sub MAX/) transistor technology.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125896536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology Si/SiGe HBT BiCMOS技术的机械平面双轴应变效应
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398178
M. Nayeem, B. Haugerud, R. Krithivasan, Yuan Lu, Chendong Zhu, R. Belford, J. Cressler, A. Joseph
{"title":"Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology","authors":"M. Nayeem, B. Haugerud, R. Krithivasan, Yuan Lu, Chendong Zhu, R. Belford, J. Cressler, A. Joseph","doi":"10.1109/SMIC.2004.1398178","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398178","url":null,"abstract":"The first results of the effects of mechanical planar biaxial tensile strain applied, post fabrication, to Si/SiGe HBT BiCMOS technology are reported in this work. Planar biaxial tensile strain was applied to the samples, which included both standard Si CMOS, SiGe HBT, and an epitaxial-base Si BJT control, for both first and second generation SiGe technologies. Device characterization was performed before and after strain, under identical conditions. At a strain level of 0.123%, increases in the saturation current as well as effective mobility are observed for the nFET. The Si BJT /SiGe HBT showed a consistent decrease in collector current and hence current gain after strain.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122644672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of self-heating in advanced high-speed SiGe bipolar circuits using the temperature simulator TESI 用温度模拟器TESI模拟先进高速SiGe双极电路的自热
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398176
M. Pfost, R. Lachner, Hao Li
{"title":"Simulation of self-heating in advanced high-speed SiGe bipolar circuits using the temperature simulator TESI","authors":"M. Pfost, R. Lachner, Hao Li","doi":"10.1109/SMIC.2004.1398176","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398176","url":null,"abstract":"Advanced SiGe bipolar technologies now allow the realization of very-high-speed IC such as 40 Gbit/s multiplexers and 77 GHz automotive radar VCO, even if high output power levels are required. However, in such circuits self-heating often leads to high peak temperatures. This can decrease transistor performance and circuit lifetime and must, therefore, be considered during circuit design. In this paper we demonstrate how the temperature increase resulting from self-heating can be accurately determined already in the design phase. For this, we present the experimentally verified three-dimensional numerical temperature simulator TESI that was specifically developed for such problems. It is shown how this tool can be applied to investigate practical circuits using the core of a 40 Gbit/s power multiplexer and the buffer stage of a 77 GHz VCO with high output power as examples.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127742352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Systems engineering of RF system-on-wafer applications in SiGe [radar active electronic steered array example] 射频片上系统在SiGe中的应用系统工程[雷达有源电子操纵阵列实例]
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398164
S. C. Schiff
{"title":"Systems engineering of RF system-on-wafer applications in SiGe [radar active electronic steered array example]","authors":"S. C. Schiff","doi":"10.1109/SMIC.2004.1398164","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398164","url":null,"abstract":"For moderate performance radar and communications systems operating at Ku-band and above, the use of entire wafers individually comprised of a lattice of low-power transmit-receive (T/R) modules is an economically attractive alternative to traditional approaches employing microwave tubes or MMICs that are individually packaged. Silicon germanium is presently the technology of choice because it offers the potential of reasonable power levels and performance in the f/sub T/, f/sub max/ regime above 200 GHz, together with yields unreachable using III-V compound semiconductors, the ability to integrate RF and logic, and prices approaching those of conventional CMOS. In this paper, we examine systems-level performance for such systems, focusing on an active electronic steered array (AESA) in a Ku-band coherent radar. The dependence of system performance on yield and circuit performance variation is explored.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126249446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Achieving frequency-agile radio 实现频率捷变无线电
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398173
R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar
{"title":"Achieving frequency-agile radio","authors":"R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar","doi":"10.1109/SMIC.2004.1398173","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398173","url":null,"abstract":"This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127930448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bridging the gap between microscopic and macroscopic theories of noise in bipolar junction transistors 弥合双极结晶体管噪声的微观和宏观理论之间的差距
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398209
G. Niu
{"title":"Bridging the gap between microscopic and macroscopic theories of noise in bipolar junction transistors","authors":"G. Niu","doi":"10.1109/SMIC.2004.1398209","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398209","url":null,"abstract":"The major noise sources in a bipolar transistor are the base resistance thermal noise, or Johnson noise, the base current shot noise and the collector current shot noise. The shot noise is described by a spectral density of 2qI, I being the DC base, I/sub B/, or collector, I/sub C/, current. We present a detailed microscopic treatment of the transistor collector current shot noise, which is typically given as a macroscopic result of electrons passing through the EB junction barrier. The analysis can be applied to heterojunction bipolar transistors as well as to non-uniform doping cases. The critical assumptions behind the magic 2qI/sub C/ expression are identified. One of them is that the noise due to majority carrier velocity fluctuations is not included, which dominates at high injection. Velocity saturation and velocity overshoot can also cause deviation from 2qI/sub C/. We show detailed modeling of the noise source within an incremental section, its propagation towards the transistor terminal, and the integration over all of the incremental sections for evaluation of the total terminal noise. The concept of scalar and vector Green's functions as well as their equivalence to Schockley's impedance field concept are illustrated with an emphasis on intuitive understanding. These concepts are essential to performing effective numerical noise simulation, which has recently become available in commercial TCAD tools.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130788270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
In search of a Si/SiGe THz quantum cascade laser 寻找一种Si/SiGe太赫兹量子级联激光器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398188
D. Paul, P. Townsend, S. Lynch, R. Kelsall, Z. Ikonić, P. Harrison, D. Norris, S. Liew, A. Cullis, X. Li, Jing Zhang, N. Bain, H. Gamble, W. Tribe, D. Arnone
{"title":"In search of a Si/SiGe THz quantum cascade laser","authors":"D. Paul, P. Townsend, S. Lynch, R. Kelsall, Z. Ikonić, P. Harrison, D. Norris, S. Liew, A. Cullis, X. Li, Jing Zhang, N. Bain, H. Gamble, W. Tribe, D. Arnone","doi":"10.1109/SMIC.2004.1398188","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398188","url":null,"abstract":"While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at /spl sim/3 THz (/spl sim/100 /spl mu/m) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115906646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs 8.5 GHz基于SiGe的放大器，采用全自对准双台面SiGe hbt
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398232
Kok-Yan Lee, B. Johnson, S. Mohammadi, P. Bhattacharya, L. Katehi, G. Ponchak
{"title":"An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs","authors":"Kok-Yan Lee, B. Johnson, S. Mohammadi, P. Bhattacharya, L. Katehi, G. Ponchak","doi":"10.1109/SMIC.2004.1398232","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398232","url":null,"abstract":"We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122288527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
24 and 36 GHz SiGe HBT power amplifiers 24和36 GHz SiGe HBT功率放大器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398215
S. Chartier, E. Sonmez, H. Schumacher
{"title":"24 and 36 GHz SiGe HBT power amplifiers","authors":"S. Chartier, E. Sonmez, H. Schumacher","doi":"10.1109/SMIC.2004.1398215","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398215","url":null,"abstract":"We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good matching as well as a high output linearity.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125123477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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