R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar
{"title":"实现频率捷变无线电","authors":"R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar","doi":"10.1109/SMIC.2004.1398173","DOIUrl":null,"url":null,"abstract":"This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Achieving frequency-agile radio\",\"authors\":\"R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar\",\"doi\":\"10.1109/SMIC.2004.1398173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.