R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar
{"title":"Achieving frequency-agile radio","authors":"R. Mukhopadhyay, Y. Park, J.S. Lee, S. Nuttinck, J. Cressler, J. Laskar","doi":"10.1109/SMIC.2004.1398173","DOIUrl":null,"url":null,"abstract":"This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 /spl mu/m SiGe BiCMOS process.