An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs

Abstract

We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.