Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398169

F. De Paola, L. D. de Vreede, L. Nanver, N. Rinaldi, J. Burghartz

引用次数: 2

Abstract

A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gbit/s driver operation for a 13/15 GHz (f/sub T//f/sub MAX/) transistor technology.

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用于10gb /s光通信系统的高电阻率硅行波放大器的设计与表征

一种双极行波放大器作为氩增强高电阻硅DIMES03工艺技术的技术演示。改进的有源级基于发射器-跟随器-级联码拓扑结构，可为13/15 GHz (f/sub T//f/sub MAX/)晶体管技术提供10 Gbit/s的驱动器操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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