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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.最新文献

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Design of RF filters using silicon integrated passive components 采用硅集成无源元件的射频滤波器设计
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398160
T. Kamgaing, R. Henderson, M. Petras
{"title":"Design of RF filters using silicon integrated passive components","authors":"T. Kamgaing, R. Henderson, M. Petras","doi":"10.1109/SMIC.2004.1398160","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398160","url":null,"abstract":"The paper discusses the design and characterization of RF filters in Freescale's 0.4 micron SiGe BiCMOS process. An integration scheme for bandpass filters on a standard silicon substrate using monolithic transformers is presented. A 1.9 GHz filter using a single transformer as well as its dual, where the transformer is replaced by three inductors, is fabricated and measured up to 10 GHz. It is demonstrated that the transformer-based filter occupies less chip area than its inductor-based dual, with similar performance. In addition, results of a 1.7 GHz lowpass (harmonic) filter that exclusively uses high-quality factor (Q) inductors and metal-insulator-metal (MIM) capacitors, designed using scalable models is presented. First pass results show very good agreement between models and measurement.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134079993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Patch antenna on micromachined silicon 微加工硅片贴片天线
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398159
J. Hasch, T. Haghighi, C. Schollhorn, E. Kasper
{"title":"Patch antenna on micromachined silicon","authors":"J. Hasch, T. Haghighi, C. Schollhorn, E. Kasper","doi":"10.1109/SMIC.2004.1398159","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398159","url":null,"abstract":"A rectangular microstrip patch antenna, realized as a silicon based monolithic millimeter-wave integrated circuit (SIMMWIC), is presented. The antenna was designed for an operating frequency of 122 GHz and manufactured on micromachined high resistivity silicon-on-insulator (SOI) substrate. Since direct measurements of the far field pattern of an integrated antenna element are difficult at this frequency, a scaled version of the antenna (with a resonant frequency of about 9.6 GHz) was also manufactured. Far field measurements were performed, to determine the antenna performance and compare with numerical results.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"591 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123177076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications 用于混合信号应用的基片噪声隔离和电阻的测量和三维模拟
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398177
K. Rajendran, J.B. Johnson, S. Furkay, M. Kumar, S. Fischer
{"title":"Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications","authors":"K. Rajendran, J.B. Johnson, S. Furkay, M. Kumar, S. Fischer","doi":"10.1109/SMIC.2004.1398177","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398177","url":null,"abstract":"In this work an enhanced approach to 3D process modeling using mixed element meshes followed by tetrahedralization and small signal device simulation by Fielday is presented. This methodology is then used to analyze and predict the effects of various substrate isolation schemes on substrate noise coupling. Experimental results are used to calibrate and verify the simulation results. Our proposed various substrate isolation test structure results reveal that layout guidelines and isolation parameter analysis are useful in signal isolation optimization.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132430281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas 紧凑型多普勒传感器工作在31-32 GHz，使用SiGe HBT MMIC和贴片天线
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398168
R. Abele, A. Trasser, K. Schad, E. Sonmez, Hermann Schumacher
{"title":"Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas","authors":"R. Abele, A. Trasser, K. Schad, E. Sonmez, Hermann Schumacher","doi":"10.1109/SMIC.2004.1398168","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398168","url":null,"abstract":"This paper describes a compact Doppler sensor consisting of a SiGe MMIC and patch antennas for transmitting and receiving. The MMIC has a differential oscillator operating at 31-32 GHz and a single balanced Gilbert cell mixer. For the differential oscillator lumped elements are used and the Gilbert cell mixer serves two purposes. First it generates the difference frequency of the transmitted and received signal, secondly it lets the RF-signal pass. This results in a total chip size of only 380 /spl times/ 770 /spl mu/m/sup 2/. On the microwave laminate substrate TMM3 patch antennas are realized, one for receiving and two for transmitting. The pads for the MMIC are prepared with solder bumps. This way the MMIC can be flip-chip mounted to the substrate of the patch antennas resulting in low losses at the interconnects.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"98 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131879117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Integrated electronic equalizer for dispersion compensation in 10 Gb/s fiber networks 用于10gb /s光纤网络色散补偿的集成电子均衡器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398233
V. Kakani, F. Dai
{"title":"Integrated electronic equalizer for dispersion compensation in 10 Gb/s fiber networks","authors":"V. Kakani, F. Dai","doi":"10.1109/SMIC.2004.1398233","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398233","url":null,"abstract":"The paper presents the design of a high-speed transversal equalizer for dispersion compensation in 10 Gb/s fiber networks. The five-tap equalizer is implemented in a 47 GHz SiGe technology. The equalizer circuit is optimized for minimum group delay and maximum bandwidth. With added feedback in the equalizer gain stage, we achieved minimum group delay of 0.7% data period. Polarization mode dispersion compensation has been demonstrated using the proposed transversal equalizer.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128353436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers 用于x波段功率放大器效率优化的单片可重构调谐器与欧姆接触MEMS开关
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398192
G. Zheng, P. Kirby, S. Pajic, A. Pothier, P. Blondy, J. Papapolymerou, Z. Popovic
{"title":"A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers","authors":"G. Zheng, P. Kirby, S. Pajic, A. Pothier, P. Blondy, J. Papapolymerou, Z. Popovic","doi":"10.1109/SMIC.2004.1398192","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398192","url":null,"abstract":"The paper presents the first monolithic, microstrip-based X-band tuner with ohmic contact MEMS switches for efficiency optimization of class-E power amplifiers (PAs). The tuner is based on a \"3 bit-3 bit\" digital design, and uses 6 radial shunt stubs that can be selected via the integrated ohmic contact MEMS switches. The simulation tuning range for post-production efficiency optimization of a 10 GHz amplifier varies from 0.63 /spl Omega/ to 57 /spl Omega/ for the real part and from -7.5 /spl Omega/ to 51.8 /spl Omega/ for the imaginary part. Measured results of the monolithic tuners fabricated on a silicon substrate show good agreement with the simulation tuning range of the PAs. The measured maximum VSWR is 38, and the tuner size is 6/spl times/7 mm/sup 2/.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124209547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies 一种新颖的低功耗，AB类SiGe LNA，用于RF频率下的高动态范围无线通信
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398238
B. Kane, M. Wyatt, J. Marcincavage, D. Starratt, D. Copeland, M. Calvo, L. Geis, A. Castro, J. Mogensen, J. Wall
{"title":"A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies","authors":"B. Kane, M. Wyatt, J. Marcincavage, D. Starratt, D. Copeland, M. Calvo, L. Geis, A. Castro, J. Mogensen, J. Wall","doi":"10.1109/SMIC.2004.1398238","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398238","url":null,"abstract":"This paper describes an ultra linear, low power consumption, high/low gain state LNA based on the Gilbert micromixer input stage for use in any modern day wireless communications systems. The LNA was designed for L band operation, and has a simulated performance with these characteristics at 1.9 GHz: Voltage gain of 15 dB, noise figure of 2.60 dB, IIP3 of +4 dBm, and a current consumption of only 1.75 mA from a +3.0 V source. In addition, the LNA has an input impedance of 53 /spl Omega/ that does not vary with up to +2 dBm input signal levels, a characteristic not found in other LNA architectures.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125733537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
40 GHz miniature bandpass filter design in standard CMOS process 采用标准CMOS工艺设计40ghz微型带通滤波器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398212
Hung-Ta Tso, C. Kuo
{"title":"40 GHz miniature bandpass filter design in standard CMOS process","authors":"Hung-Ta Tso, C. Kuo","doi":"10.1109/SMIC.2004.1398212","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398212","url":null,"abstract":"An on-chip high performance 40 GHz miniature bandpass filter is presented. Implemented in a standard CMOS process without any extra post processing, the filter features include small size (72/spl times/400 /spl mu/m/sup 2/) and low insertion loss (1.1 dB) by using a high slow-wave-factor coplanar stripline (HS-CPS).","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134058751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs 用于高速和毫米波集成电路的Si CMOS、SiGe BiCMOS和InP HBT技术的比较
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398180
S. Voinigescu, T. Dickson, R. Beerkens, I. Khalid, P. Westergaard
{"title":"A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs","authors":"S. Voinigescu, T. Dickson, R. Beerkens, I. Khalid, P. Westergaard","doi":"10.1109/SMIC.2004.1398180","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398180","url":null,"abstract":"The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122624133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
14 GHz MEMS 4-bit phase shifter on silicon 14 GHz MEMS 4位移相器
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI: 10.1109/SMIC.2004.1398236
N. Kingsley, P. Kirby, G. Ponchak, J. Papapolymerou
{"title":"14 GHz MEMS 4-bit phase shifter on silicon","authors":"N. Kingsley, P. Kirby, G. Ponchak, J. Papapolymerou","doi":"10.1109/SMIC.2004.1398236","DOIUrl":"https://doi.org/10.1109/SMIC.2004.1398236","url":null,"abstract":"In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 /spl mu/m high-resistivity silicon (/spl epsiv//sub r/=11.7). Simulated results using a full wave simulator predict a return loss better than 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss and -0.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124192898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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