14 GHz MEMS 4位移相器

N. Kingsley, P. Kirby, G. Ponchak, J. Papapolymerou
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引用次数: 12

摘要

在这篇摘要中,我们描述了在400 /spl mu/m高电阻硅(/spl epsiv//sub r/=11.7)上,在14 GHz频率下模拟、制造和测量一个4位共面波导(CPW) MEMS移相器的工作进展。使用全波模拟器的仿真结果预测,使用完美导线的1位移相器的回波损耗优于19 dB,隔离优于-0.1 dB。单个MEMS开关的测量结果显示,在UP(未激活)状态下,回波损耗为-22 dB,隔离度为-0.095 dB;在DOWN(激活)状态下,回波损耗为-0.83 dB,隔离度为-14.5 dB。结果表明,单比特移相器的移相精度较高,但损耗高于预期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
14 GHz MEMS 4-bit phase shifter on silicon
In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 /spl mu/m high-resistivity silicon (/spl epsiv//sub r/=11.7). Simulated results using a full wave simulator predict a return loss better than 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss and -0.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.
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