14 GHz MEMS 4-bit phase shifter on silicon

N. Kingsley, P. Kirby, G. Ponchak, J. Papapolymerou
{"title":"14 GHz MEMS 4-bit phase shifter on silicon","authors":"N. Kingsley, P. Kirby, G. Ponchak, J. Papapolymerou","doi":"10.1109/SMIC.2004.1398236","DOIUrl":null,"url":null,"abstract":"In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 /spl mu/m high-resistivity silicon (/spl epsiv//sub r/=11.7). Simulated results using a full wave simulator predict a return loss better than 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss and -0.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 /spl mu/m high-resistivity silicon (/spl epsiv//sub r/=11.7). Simulated results using a full wave simulator predict a return loss better than 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss and -0.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.
14 GHz MEMS 4位移相器
在这篇摘要中,我们描述了在400 /spl mu/m高电阻硅(/spl epsiv//sub r/=11.7)上,在14 GHz频率下模拟、制造和测量一个4位共面波导(CPW) MEMS移相器的工作进展。使用全波模拟器的仿真结果预测,使用完美导线的1位移相器的回波损耗优于19 dB,隔离优于-0.1 dB。单个MEMS开关的测量结果显示,在UP(未激活)状态下,回波损耗为-22 dB,隔离度为-0.095 dB;在DOWN(激活)状态下,回波损耗为-0.83 dB,隔离度为-14.5 dB。结果表明,单比特移相器的移相精度较高,但损耗高于预期。
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