用于x波段功率放大器效率优化的单片可重构调谐器与欧姆接触MEMS开关

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398192

G. Zheng, P. Kirby, S. Pajic, A. Pothier, P. Blondy, J. Papapolymerou, Z. Popovic

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引用次数: 8

摘要

本文提出了第一个基于单片微带的x波段调谐器，该调谐器带有欧姆接触MEMS开关，用于优化e类功率放大器(PAs)的效率。调谐器基于“3位-3位”数字设计，并使用6个径向分流存根，可以通过集成的欧姆接触MEMS开关进行选择。10ghz放大器后期效率优化的仿真调谐范围为实部0.63 /spl Omega/至57 /spl Omega/，虚部-7.5 /spl Omega/至51.8 /spl Omega/。在硅衬底上制作的单片调谐器的测量结果与模拟调谐范围吻合较好。测量到的最大驻波比为38，调谐器尺寸为6/spl倍/7毫米/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers

The paper presents the first monolithic, microstrip-based X-band tuner with ohmic contact MEMS switches for efficiency optimization of class-E power amplifiers (PAs). The tuner is based on a "3 bit-3 bit" digital design, and uses 6 radial shunt stubs that can be selected via the integrated ohmic contact MEMS switches. The simulation tuning range for post-production efficiency optimization of a 10 GHz amplifier varies from 0.63 /spl Omega/ to 57 /spl Omega/ for the real part and from -7.5 /spl Omega/ to 51.8 /spl Omega/ for the imaginary part. Measured results of the monolithic tuners fabricated on a silicon substrate show good agreement with the simulation tuning range of the PAs. The measured maximum VSWR is 38, and the tuner size is 6/spl times/7 mm/sup 2/.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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