A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers

Abstract

The paper presents the first monolithic, microstrip-based X-band tuner with ohmic contact MEMS switches for efficiency optimization of class-E power amplifiers (PAs). The tuner is based on a "3 bit-3 bit" digital design, and uses 6 radial shunt stubs that can be selected via the integrated ohmic contact MEMS switches. The simulation tuning range for post-production efficiency optimization of a 10 GHz amplifier varies from 0.63 /spl Omega/ to 57 /spl Omega/ for the real part and from -7.5 /spl Omega/ to 51.8 /spl Omega/ for the imaginary part. Measured results of the monolithic tuners fabricated on a silicon substrate show good agreement with the simulation tuning range of the PAs. The measured maximum VSWR is 38, and the tuner size is 6/spl times/7 mm/sup 2/.