A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies

B. Kane, M. Wyatt, J. Marcincavage, D. Starratt, D. Copeland, M. Calvo, L. Geis, A. Castro, J. Mogensen, J. Wall
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Abstract

This paper describes an ultra linear, low power consumption, high/low gain state LNA based on the Gilbert micromixer input stage for use in any modern day wireless communications systems. The LNA was designed for L band operation, and has a simulated performance with these characteristics at 1.9 GHz: Voltage gain of 15 dB, noise figure of 2.60 dB, IIP3 of +4 dBm, and a current consumption of only 1.75 mA from a +3.0 V source. In addition, the LNA has an input impedance of 53 /spl Omega/ that does not vary with up to +2 dBm input signal levels, a characteristic not found in other LNA architectures.
一种新颖的低功耗,AB类SiGe LNA,用于RF频率下的高动态范围无线通信
本文介绍了一种基于Gilbert微混频器输入级的超线性、低功耗、高增益/低增益状态LNA,适用于任何现代无线通信系统。该LNA设计用于L频段工作,在1.9 GHz时具有以下特性:电压增益为15 dB,噪声系数为2.60 dB, IIP3为+4 dBm, +3.0 V源电流消耗仅为1.75 mA。此外,LNA的输入阻抗为53 /spl ω /,不随+2 dBm输入信号电平变化,这是其他LNA架构所没有的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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