一种新颖的低功耗，AB类SiGe LNA，用于RF频率下的高动态范围无线通信

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398238

B. Kane, M. Wyatt, J. Marcincavage, D. Starratt, D. Copeland, M. Calvo, L. Geis, A. Castro, J. Mogensen, J. Wall

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引用次数: 0

摘要

本文介绍了一种基于Gilbert微混频器输入级的超线性、低功耗、高增益/低增益状态LNA，适用于任何现代无线通信系统。该LNA设计用于L频段工作，在1.9 GHz时具有以下特性:电压增益为15 dB，噪声系数为2.60 dB, IIP3为+4 dBm， +3.0 V源电流消耗仅为1.75 mA。此外，LNA的输入阻抗为53 /spl ω /，不随+2 dBm输入信号电平变化，这是其他LNA架构所没有的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies

This paper describes an ultra linear, low power consumption, high/low gain state LNA based on the Gilbert micromixer input stage for use in any modern day wireless communications systems. The LNA was designed for L band operation, and has a simulated performance with these characteristics at 1.9 GHz: Voltage gain of 15 dB, noise figure of 2.60 dB, IIP3 of +4 dBm, and a current consumption of only 1.75 mA from a +3.0 V source. In addition, the LNA has an input impedance of 53 /spl Omega/ that does not vary with up to +2 dBm input signal levels, a characteristic not found in other LNA architectures.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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